发表机构
Institute of Solid State Physics; National Taiwan University; Northeastern University（固体物理研究所; 国立台湾大学; 东北大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究通过测量SiGe/Si/SiGe量子阱中电子固体的起始密度，确定了垂直磁场下的熔化相图，发现磁场增强熔化温度，并观察到熔化温度平台，归因于微晶共振模式。
AI 中文摘要
我们通过测量SiGe/Si/SiGe量子阱中超高迁移率二维电子系统在垂直磁场中不同温度下绝缘态双阈值电压-电流曲线的起始密度，确定了电子固体的热熔化相图。磁场的引入导致起始密度显著增加，这种增加在最低温度时最强，并随温度升高而减弱，同时熔化温度随磁场增强而升高。这些数据与理论预测一致。出乎意料的是，在固定磁场下熔化温度随电子密度的变化呈现出平台，这可以用微晶中的共振模式来解释。
英文摘要
We determine the thermal melting phase diagram of the electron solid by measuring the onset density of the double-threshold voltage-current curves in the insulating state in the ultra-high mobility two-dimensional electron system in SiGe/Si/SiGe quantum wells at different temperatures in perpendicular magnetic fields. The introduction of a magnetic field leads to a considerable increase in the onset density, which is strongest at the lowest temperatures and decreases with increasing temperature, and the melting temperature increases with magnetic field. These data are in agreement with theoretical predictions. Unexpectedly, the melting temperature as a function of electron density in a fixed magnetic field reveals a plateau, which can be interpreted in terms of resonance modes in the crystallites.
