发表机构
National Institute of Standards and Technology; Frequency Electronics Inc.; KBM Enterprises Inc.（美国国家标准与技术研究院; 频率电子公司; KBM企业公司）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究表征了多种10 GHz放大器的残余AM和PM噪声，发现多数放大器AM噪声高于PM噪声，并展示了功率合成配置可显著降低噪声，同时指出偏置电源质量在低频偏移下是关键设计参数。
AI 中文摘要
在微波系统设计中，幅度调制（AM）噪声相对于相位调制（PM）噪声常常被忽略。然而，在需要超低PM噪声的高性能应用中，由于AM到PM转换机制，AM噪声成为关键的限制因素。由于商业微波元件很少（如果有的话）提供AM噪声规格，本研究对几种10 GHz放大器的残余AM和PM噪声进行了表征。我们展示了各种异质结双极晶体管（HBT）放大器设计的性能数据，并演示了通过功率合成配置实现的噪声降低。例如，一个分立芯片GaAs HBT放大器在四路功率合成配置中，在1 kHz偏移处实现了低于$-160$ dBrad$^2$/Hz的残余PM噪声和约$-155$ dB/Hz的AM噪声。一个显著发现是，本研究中调查的大多数放大器设计表现出相对于其PM噪声更高的AM噪声，仅有少数例外。偏置电源质量对残余噪声的影响也被量化，表明在1 kHz偏移以下，电压调节器的选择是一阶设计参数。
英文摘要
In microwave systems design, amplitude modulation (AM) noise is often ignored relative to phase modulation (PM) noise. However, in high-performance applications requiring ultra-low PM noise, AM noise becomes a critical limiting factor due to AM-to-PM conversion mechanisms. Because AM noise specifications are rarely, if ever, provided for commercial microwave components, this study characterizes the residual AM and PM noise of several 10 GHz amplifiers. We present performance data for various Heterojunction Bipolar Transistor (HBT) amplifier designs and demonstrate the noise reduction achieved through power-summed configurations. For example, a discrete-die GaAs HBT amplifier achieves residual PM noise below $-160$ dBrad$^2$/Hz and AM noise of approximately $-155$ dB/Hz at a 1 kHz offset in a quad power-summed configuration. A notable finding is that the majority of amplifier designs surveyed in this study exhibit higher AM noise relative to their PM noise, with only a few exceptions. The impact of bias supply quality on residual noise is also quantified, demonstrating that the choice of voltage regulator is a first-order design parameter below 1 kHz offset.
Comments12 pages, 20 Figures
