发表机构
Univ. Grenoble Alpes, CNRS, Grenoble INP, SIMaP（格勒诺布尔阿尔卑斯大学、法国国家科学研究中心、格勒诺布尔理工学院、材料科学研究所）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
提出利用衍射斑点内部强度轮廓模拟与实验对比的方法，实现纳米束旋进电子衍射的高精度取向测量，优于标准ACOM，并校正其系统误差。
AI 中文摘要
我们开发了一种方法，用于以高角度分辨率测量纳米束旋进电子衍射图案的晶体学取向，并适用于四维扫描旋进电子衍射。我们展示了衍射斑点内部强度变化可以被模拟，并与实验变化相关联，从而以比标准自动晶体取向映射（ACOM）方法更好的角度分辨率测量晶体学取向。在围绕主测角仪倾斜轴对硅单晶进行的长时间曝光倾斜序列中，通过精化，施加的倾斜角以0.044°至0.054°的精度被恢复，而标准方法为0.25°至0.33°。较短的曝光时间引入泊松噪声，将精度略微降低至0.054°至0.066°的范围。该方法还校正了ACOM在近带轴附近的系统误差。
英文摘要
We develop a method to measure crystallographic orientations with high angular resolution for nano-beam precession electron diffraction patterns, and applicable to 4D scanning precession electron diffraction. We show that internal variations of intensity in the diffraction spots can be simulated and correlated to experimental variations to measure the crystallographic orientation with a much better angular resolution that with the standard method of automated crystal orientation mapping (ACOM). In a tilt series carried out with long exposure time on a monocrystal of silicon around the main goniometer tilt axis, the imposed tilt angles are retrieved with a 0.044° to 0.054° precision with refinement, against 0.25° to 0.33° with the standard method. Shorter exposure times, introducing Poisson noise, marginally degrade the precision to a 0.054° to 0.066° range. The method also corrects a systematic error of ACOM near zone axis.
