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从仿真到制造:利用氮化硅应力层图案化实现硅晶体波动器

From Simulation to Fabrication: Realizing Silicon Crystalline Undulators with Silicon Nitride Stressor Layer Patterning

L. Malagutti, L. Bandiera, F. Bonafè, N. Canale, D. De Salvador, P. Fedeli, V. Guidi, A. V. Korol, F. Mancarella, R. Negrello, Gianfranco Paternò, M. Romagnoni, F. Sgarbossa, A. V. Solov'yov, A. Sytov, D. Valzani, A. Mazzolari

arXiv 2610.01606首次发表:更新:

发表机构

INFN, Sezione di Ferrara; CNR - IMM, Bologna; Università degli Studi di Padova; INFN, Laboratori Nazionali di Legnaro; Università degli Studi di Ferrara; MBN Research Center, Frankfurt(意大利国家核物理研究所费拉拉分部; 意大利国家研究委员会材料研究所博洛尼亚分部; 帕多瓦大学; 意大利国家核物理研究所莱尼亚罗国家实验室; 费拉拉大学; MBN研究中心)

机构由 AI 辅助整理,请以论文原文为准。

AI 中文总结

本研究通过应力层图案化技术,结合有限元仿真优化,成功制造了硅晶体波动器,实现了亚毫米周期均匀变形,可产生5-15 MeV伽马光子,验证了其作为高性能辐射源的可行性。

AI 中文摘要

晶体波动器是一种具有周期性变形的晶体,可使沟道粒子振荡,从而产生相干电磁波。本研究采用应力层图案化技术在硅基底上诱导所需的变形。通过有限元方法仿真优化了波动器的几何参数。主要目标是利用硅(110)面优越的沟道特性,实现亚毫米周期且振幅超过1纳米的 sinusoidal 变形。关键参数如基底厚度和波动器周期被精心调整,以确保均匀变形,同时最小化可能降低性能的高次谐波影响。基于仿真结果,成功制造了一个厚度为160微米、包含10个周期且周期长度为334微米的晶体波动器。最终器件展示了结构完整性,并从表面延伸至20微米处具有均匀变形。该波动器专为5-30 GeV粒子束设计,能够产生5-15 MeV范围内的伽马光子。这项工作有效整合了先进仿真技术与精密制造方法,证明了晶体波动器作为高性能伽马辐射产生装置的可行性。

英文摘要

A crystalline undulator is a crystal exhibiting periodic deformations that cause channeled particles to oscillate, generating coherent electromagnetic waves. In this study, stressor layer patterning has been employed to induce the desired deformations on a silicon substrate. Finite element method simulations were performed to optimize the geometric parameters of the undulator. The primary focus was on achieving sinusoidal deformation with sub-millimeter period and amplitude exceeding 1~nm, utilizing the silicon (110) plane for its superior channeling properties. Key parameters, such as substrate thickness and undulator period, were meticulously refined to ensure uniform deformation while minimizing the impact of higher harmonics, which could degrade performance. Based on the simulation results, a crystalline undulator, 160 $μ$m thick and consisting of 10 periods with a period length of 334 $μ$m, has been successfully fabricated. The final device demonstrates structural integrity and a uniform deformation extending up to 20 $μ$m from the surface. Specifically designed for use with 5-30 GeV particle beams, the undulator is capable of generating gamma photons in the 5-15 MeV range. This work effectively integrates advanced simulation techniques with precise fabrication methods, demonstrating the feasibility of crystalline undulators as high-performance devices for generating gamma radiation.

Comments6 pages, 4 figures

Journal refNucl. Instrum. Meth. A, vol. 1076, 170480 (2025)

论文原文

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