量子阱共振隧穿二极管探针用于扭转双层MoS$_2$中的关联态

中文摘要 AI 辅助

过渡金属二硫属化物（TMDs）中形成的莫尔超晶格为探索由强电子关联产生的新奇量子相提供了一个多功能平台。在本工作中，我们开发了一种新的实验平台——量子阱共振隧穿二极管（QWRTD），用于探测约$57^\circ$扭转双层MoS$_2$（tMoS$_2$）的电子景观。通过测量微分电导（$dI/dV_{\text{Probe}}$）作为填充因子$\nu$和位移场$D$的函数，我们在$\nu = 1$处观察到一个稳健的整数关联绝缘态，该态在所测的位移场范围内持续存在。此外，我们识别出一个由位移场诱导的分数绝缘态，位于$\nu = 3/4$，当$D < -75$~mV/nm时出现。温度和磁场依赖的测量表征了该$\nu = 3/4$态为潜在的一般化维格纳晶体。这些关联态也在另一个具有相似扭转角（约$56.5^\circ$）的器件中观察到。我们的结果为近AB堆叠tMoS$_2$中的关联态提供了直接证据，并将QWRTD确立为研究范德华异质结构中强关联和拓扑性的强大实验工具。

英文摘要

Moiré superlattices formed in transition metal dichalcogenides (TMDs) offer a versatile platform for exploring emergent quantum phases arising from strong electronic correlations. In this work, we develop a new experimental platform, the quantum well resonant tunneling diode (QWRTD), to probe the electronic landscape of $\approx 57^\circ$ twisted bilayer MoS$_2$ (tMoS$_2$). By measuring the differential conductance ($dI/dV_{\text{Probe}}$) as a function of filling factor $ν$ and displacement field $D$, we observe a robust integer correlated insulating state at $ν= 1$ that persists across the measured displacement field range. Furthermore, we identify a displacement-field-induced fractional insulating state at $ν= 3/4$ for $D < -75$~mV/nm. Temperature- and magnetic-field-dependent measurements characterize this $ν= 3/4$ state as a potential generalized Wigner crystal. These correlated states are also observed in another device with a similar twist angle ($\approx 56.5^\circ$). Our results provide direct evidence of correlated states in near-AB-stacked tMoS$_2$ and establish QWRTD as a powerful experimental tool for investigating strong correlations and topology in van der Waals heterostructures.

发表机构

• the Hong Kong University of Science and Technology（香港科技大学）
• Anhui University（安徽大学）

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