发表机构
Technische Universität Chemnitz; Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden (IFW); Chair for Emerging Electronic Technologies, Technische Universität Dresden（开姆尼茨工业大学; 德累斯顿莱布尼茨固体与材料研究所; 德累斯顿工业大学新兴电子技术系）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文提出强度调制光致发光光谱（IMPLS）作为频域工具，在操作条件下测量钙钛矿薄膜及太阳能电池的载流子寿命，通过传递函数区分电荷转移与界面复合，并克服IMVS电容限制，解析出器件寿命。
AI 中文摘要
卤化物钙钛矿中的载流子寿命常随注入水平变化数个数量级，这使得传统时间分辨光致发光的分析以及已报道寿命的比较变得复杂。我们采用强度调制光致发光光谱（IMPLS）作为频域替代方法。在操作条件下进行测量，它可给出特定注入水平（例如等效一个太阳光照）下的寿命。在薄膜上，IMPLS与稳态光致发光得到的寿命相当。对于钙钛矿/传输层堆叠结构，IMPLS响应变得更加复杂。一个专门的传递函数将电荷转移与界面复合区分开来，并预测了太阳能电池中载流子寿命的上限。在器件中，诸如强度调制光电压光谱（IMVS）等电学方法常因电容效应而无法测量寿命。IMPLS不仅显示出与IMVS相同的两个特征频率，还显示出第三个频率，从而解析出寿命本身。
英文摘要
The charge-carrier lifetime in halide perovskites often varies by orders of magnitude with the injection level, complicating the analysis of conventional time-resolved photoluminescence and comparisons of reported lifetimes. We use intensity-modulated photoluminescence spectroscopy (IMPLS) as a frequency-domain alternative. Carried out under operating conditions, it yields the lifetime at a specific injection level, e.g., one-sun-equivalent illumination. On thin films, IMPLS and steady-state photoluminescence yield comparable lifetimes. For perovskite/transport-layer stacks, the IMPLS response becomes more complex. A dedicated transfer function disentangles charge transfer from interface recombination and predicts an upper limit on the charge-carrier lifetime in the solar cell. In devices, electrical methods such as intensity-modulated photovoltage spectroscopy (IMVS) often fail to measure the lifetime due to capacitive effects. IMPLS shows not only the same two characteristic frequencies as IMVS, but also a third one, thereby resolving the lifetime itself.
