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谷光伏器件的联合光致发光与电学表征及其等效电路解释

Combined photoluminescence and electrical characterization of valley photovoltaic devices explained with an equivalent circuit

Daixi Xia, Abhinav S. Sharma, Andreas Pusch, Murad J. Y. Tayebjee, Michael P. Nielsen, Fiacre E. Rougieux, Kyle R. Dorman, Tetsuya D. Mishima, Michael B. Santos, Ian R. Sellers, Nicholas J. Ekins-Daukes, Jacob J. Krich

arXiv 2609.37854首次发表:更新:

发表机构

University of Ottawa; Ludwig-Maximilians-Universität München; University of New South Wales; University of Oklahoma; University at Buffalo(渥太华大学; 慕尼黑大学; 新南威尔士大学; 俄克拉荷马大学; 布法罗大学)

机构由 AI 辅助整理,请以论文原文为准。

AI 中文总结

本文提出等效电路模型,同时解释谷光伏器件的光致发光与电学测量,揭示反向二极管导致S形电流-电压特性及低效率,并指出消除反向二极管是实现高效的关键。

AI 中文摘要

我们提出了一种等效电路分析,该分析同时考虑了谷光伏器件的光致发光和电学响应。谷光伏(VPV)是热载流子太阳能电池的一种新概念,其中吸收材料中电子的谷间散射有助于将导带电子种群维持在亚稳态卫星谷中,这些卫星谷的能量高于导带最小值。我们测量了VPV器件的光致发光和电学信号随强度和电压的变化,该器件此前已显示出S形电流-电压特性,因此效率较低。我们提出了一个等效电路,该电路能够捕捉S形电流-电压曲线,并同时描述我们的光致发光和电学测量结果。等效电路模型表明,反向二极管导致电子提取效率低下,从而产生S形特性。我们使用泊松/漂移-扩散模型来证明,反向二极管可以由谷散射过程本身或异质结势垒来解释。在VPV器件实现高效率之前,必须消除反向二极管。

英文摘要

We present an equivalent-circuit analysis that simultaneously considers the photoluminescence and electrical responses of valley photovoltaic devices. Valley photovoltaics (VPV) are a novel concept for hot-carrier solar cells, where intervalley scattering of electrons in the absorbing material helps maintain the conduction-band electron populations at metastable satellite valleys, which are at energies higher than the conduction-band minimum. We measure intensity- and voltage-dependent photoluminescence and electrical signals of a VPV device, which has previously shown S-shaped current-voltage characteristics and thus low efficiency. We present an equivalent circuit that captures the S-shaped current-voltage curves and simultaneously describes our photoluminescence and electric measurements. The equivalent-circuit model indicates that a reverse diode causes inefficient extraction of electrons and thus the S shape. We use a Poisson/drift-diffusion model to demonstrate that the reverse diode can be either explained by the valley-scattering process itself or a heterojunction barrier. The reverse diode must be eliminated before VPV devices can achieve high efficiency.

Comments7 pages + 2 pages supplementary material

论文原文

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