用于阱离子核自旋量子比特的磁场不敏感门组
A magnetic-field insensitive gate set for trapped-ion nuclear spin qubits
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中文总结 AI 辅助
本文提出一套完整的磁场不敏感门组，利用电子自旋实现快速双量子比特相位门，同时保留核编码以保护量子比特免受磁场影响，适用于高磁场阱离子核自旋量子比特。
中文摘要 AI 辅助
我们概述了一套完整的操作集，用于操控存储在高磁场中的阱离子核自旋量子比特，例如潘宁阱所需的高磁场，其中由于外场哈密顿量的主导作用，核自旋与电子自旋在很大程度上解耦。与使用电子自旋相比，减小的核磁矩导致对外部磁场不敏感，但也使得核自旋难以在快速时间尺度上操控。为了保持速度，我们提出了一种双量子比特相位门技术，该技术利用电子自旋，但通过保留核编码使量子比特免受磁场影响。此方法适用于较低磁场下的磁场不敏感量子比特，也适用于微波和激光场梯度。
英文摘要
We outline a complete set of operations for manipulating nuclear spin qubits of trapped-ions stored in high magnetic fields such as required for Penning trapping, where the nuclear and electron spins are largely decoupled due to the dominance of the external field Hamiltonian. The reduced nuclear magnetic moment results in insensitivity to external magnetic fields compared to the use of an electron spin, but also makes the nuclear spin hard to manipulate on fast timescales. To maintain speed, we propose a two-qubit phase gate technique which utilizes the electron spin, but for which the qubit remains protected from magnetic fields through retaining the nuclear encoding. This method works for magnetic-field insensitive qubits at lower fields as well as for both microwave and laser field gradients.
发表机构
- ETH Zürich（苏黎世联邦理工学院）
- ZuriQ AG（ZuriQ公司）
机构由 AI 辅助整理，请以论文原文为准。
