腔耦合硅C中心的L波段单光子产生

中文摘要 AI 辅助

将单光子源单片集成到硅光子学中，为实现可扩展的量子通信架构提供了一种引人注目的解决方案。在候选的硅色心中，C中心具有电信L波段的零声子发射，对应于光纤中传输损耗最小的光谱窗口。尽管具有这一优势，隔离单个C中心在固态量子光学中仍然是一个尚未实现的挑战。在本工作中，我们报道了单个硅C中心的隔离。通过将单个发射体耦合到纳米光子晶体腔，我们增强了零声子线的自发发射速率，观察到激发态寿命相比体材料条件缩短了五倍，这对应于珀塞尔因子下界为33。二阶自相关测量确认了所研究缺陷的单光子发射，在无背景校正的情况下获得了光学纯度$g^{(2)}(0) = 0.23$。我们的结果在硅中建立了一种天然的电信L波段量子光源，为超低损耗和长距离量子应用奠定了基础。

英文摘要

Monolithic integration of single-photon sources into silicon photonics offers a compelling solution for realizing scalable quantum telecommunication architectures. Among the candidate silicon color centers, the C-center features a zero-phonon emission in the telecom L-band, corresponding to the spectral window of minimum transmission loss in optical fibers. Despite this advantage, isolating single C-centers has remained an unrealized challenge in solid-state quantum optics. In this work, we report the isolation of a single silicon C-center. We enhance the spontaneous emission rate of the zero-phonon line by coupling the single emitter to a nanophotonic crystal cavity, observing a fivefold reduction in the excited-state lifetime compared to bulk conditions, which corresponds to a Purcell factor lower bound of 33. Second-order autocorrelation measurements confirm single-photon emission from the investigated defect, obtaining an optical purity of $g^{(2)}(0) = 0.23$ without background correction. Our results establish a native telecom L-band quantum light source in silicon, laying the foundation for ultra-low-loss and long-distance quantum applications.

发表机构

• Università di Milano-Bicocca（米兰比可卡大学）
• University of Maryland（马里兰大学）
• Ulsan National Institute of Science and Technology（蔚山科学技术院）

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