发表机构
Materials Sciences Research Center, Japan Atomic Energy Agency（日本原子能研究开发机构材料科学研究中心）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
综述利用ARPES和多种X射线光谱探测UTe2电子结构，发现技术依赖性，结合DFT+DMFT计算支持中间价态（5f²/5f³混合），为理解超导机制提供基准。
AI 中文摘要
$\mathrm{UTe}_2$因其非常规超导电性和可能实现自旋三重态、拓扑非平凡配对态而成为近年来被研究得最深入的强关联材料之一。一个核心的开放问题涉及$\mathrm{U}\\,5f$电子的性质及其在低能准粒子态中的参与。在这篇综述中，我们总结了近期利用动量分辨角分辨光电子能谱（ARPES）以及元素和构型敏感的X射线探针（包括X射线吸收谱（XAS）、X射线吸收近边结构（XANES）、X射线磁圆二色（XMCD）、共振X射线发射谱（RXES）和共振非弹性X射线散射（RIXS））对$\mathrm{UTe}_2$进行的光谱研究。一个关键发现是推断出的电子结构对技术有显著的依赖性。我们通过将这些结果与现代电子结构计算（如密度泛函理论加动力学平均场理论（DFT+DMFT））相结合，综合了当前的光谱图像。这些发现支持$\mathrm{UTe}_2$中存在中间价态基态，并显著混合了$5f^2$和$5f^3$构型，同时它们描绘了将正常态电子结构与超导机制联系起来所需的关键实验和理论基准。
英文摘要
$\mathrm{UTe}_2$ has emerged as one of the most intensively studied strongly correlated materials in recent years owing to its unconventional superconductivity and the possible realization of a spin-triplet, topologically nontrivial pairing state. A central open issue concerns the nature of the $\mathrm{U}\,5f$ electrons and their participation in low-energy quasiparticle states. In this review, we summarize recent spectroscopic studies of $\mathrm{UTe}_2$ using momentum-resolved angle-resolved photoemission spectroscopy (ARPES) and element- and configuration-sensitive X-ray probes, including X-ray absorption spectroscopy (XAS), X-ray absorption near-edge structure (XANES), X-ray magnetic circular dichroism (XMCD), resonant X-ray emission spectroscopy (RXES), and resonant inelastic X-ray scattering (RIXS). A key finding is the pronounced technique dependence of the inferred electronic structure. We synthesize the present spectroscopic picture by integrating these results with modern electronic-structure calculations such as density functional theory plus dynamical mean-field theory (DFT+DMFT). These findings support an intermediate-valence ground state with significant admixture of $5f^2$ and $5f^3$ configurations in $\mathrm{UTe}_2$, and they delineate key experimental and theoretical benchmarks needed to connect the normal-state electronic structure to the superconducting mechanism.
Comments38 pages, 17 figures
Journal refElectronic Structure 8, 043001 (2026)
