发表机构
Norwegian University of Science and Technology (NTNU); University of Oslo; ETH Zurich; Lawrence Berkeley National Laboratory; Univ Rouen Normandie, INSA Rouen Normandie, CNRS, Normandie Univ; Department of Physics, NTNU; Faculty of Physics and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen; Research Center Future Energy Materials and Systems, Research Alliance Ruhr（挪威科技大学; 奥斯陆大学; 苏黎世联邦理工学院; 劳伦斯伯克利国家实验室; 鲁昂诺曼底大学、鲁昂诺曼底国立应用科学学院、法国国家科学研究中心、诺曼底大学; 挪威科技大学物理系; 杜伊斯堡-埃森大学物理学院与纳米集成中心（CENIDE）; 未来能源材料与系统研究中心，鲁尔研究联盟）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究通过Zr掺杂ErMnO3模型，揭示原子探针层析成像中掺杂原子蒸发场与测量位点偏好相关，发现选择性保留影响位点确定，对APT分析掺杂原子至关重要。
AI 中文摘要
复杂氧化物具有广泛的电、磁和光学性质，这些性质可以通过化学掺杂进行精确调控。然而，对于控制性质的掺杂剂，随着掺杂水平的降低，其原子尺度分析变得越来越困难。原子探针层析成像（APT）提供了化学灵敏度和空间分辨率，能够成像低至百万分之几的单个掺杂原子。为了可靠地提取此类信息，需要详细了解原子特异的场蒸发过程。在此，我们以Zr掺杂的ErMnO3作为模型系统，首次展示了APT测量的掺杂原子原子位置与场蒸发条件之间的关联。我们的分析揭示了基体和掺杂原子均存在显著的选择性保留，这强烈影响掺杂剂位点确定，并可能导致错误解释。基于场蒸发模拟，我们解释了保留效应由内在和外在参数决定，分别如掺杂剂的蒸发场和浓度以及分析温度。我们的结果对于基于APT的固体系统中单个掺杂原子的分析以及一般原子水平上场蒸发动力学的理解具有重要意义。
英文摘要
Complex oxides possess a wide range of electric, magnetic, and optical properties that can be precisely tuned by chemical doping. The atomic-scale analysis of the property-controlling dopants, however, becomes increasingly difficult towards low doping levels. Atom probe tomography (APT) offers chemical sensitivity and spatial resolution to image individual dopant atoms down to a few parts per million. To reliably extract such information, detailed knowledge about the atom-specific field evaporation processes is required. Here we demonstrate a first insight into the APT-measured atomic position of dopant atoms and the field evaporation conditions, using Zr-doped ErMnO3 as a model system. Our analysis reveals a substantial preferential retention of both matrix and dopant atoms which strongly affects the dopant site determination and can lead to an incorrect interpretation. The retention effect is determined by intrinsic and extrinsic parameters, such as the dopant's evaporation field and concentration and the analysis temperature, respectively, as we explain based on field-evaporation simulations. Our results are important for the APT-based analysis of individual dopant atoms in solid systems and the understanding of field evaporation dynamics at the atomic level in general.
