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arXiv 2609.33163cs.ETcond-mat.supr-con

JFS-CryoMem:一种采用电压控制超导器件和飞焦级写/读能量的低温存储器

JFS-CryoMem: A Cryogenic Memory with Voltage-Controlled Superconducting Devices and Femtojoule-Scale Write/Read Energies

Md Rahatul Islam Udoy, Md Mazharul Islam, Juan P. Mendez, Denis Mamaluy, Aaron J. Muhowski, Samuel Hawkins, William M. Martinez, Courtney Sovinec, Wei Pan, Ahmedullah Aziz

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中文总结 AI 辅助

本文提出JFS-CryoMem低温存储器架构,集成JJFET选择器与FeSQUID存储单元,实现非破坏性读出和低能耗,并通过实验校准模型验证了4×4及16×16阵列的可扩展性和感测权衡。

中文摘要 AI 辅助

可扩展的低温系统需要兼具非易失性存储、选择性访问、低热扰动以及与超导电子器件兼容性的存储器。我们提出了一种低温存储器架构,该架构将电压控制的约瑟夫森结场效应晶体管(JJFET)选择器与铁电超导量子干涉器件(FeSQUID)存储单元集成在一起,以下称为JFS-CryoMem。JJFET提供栅极控制的单元选择,而FeSQUID在稳定的剩余极化态中存储信息。JFS-CryoMem具有独立的读和写路径机制,支持非破坏性读出以及编程和感测条件的独立优化。该架构使用经过实验校准的紧凑模型进行评估,这些模型重现了两种组成器件的实测电特性。我们演示了使用半偏置方案的选择性编程、非易失性状态保持以及在4×4阵列中考虑所选单元和所有未选并联分支时的可区分读出。然后,我们将分析扩展到高达16×16的阵列,并研究阵列缩放如何改变电流分布、列等效电阻、读出分离度、所需的位线电流和读能量。结果揭示了与更大阵列相关的主要感测和能量权衡,并确定了随着阵列增长保持读出可区分性所需的操作条件。JFS-CryoMem为量子、高性能和面向空间的计算系统中的低温存储器提供了从器件到阵列的框架。

英文摘要

Scalable cryogenic systems require memory that combines nonvolatile storage, selective access, low thermal disturbance, and compatibility with superconducting electronics. We present a cryogenic memory architecture that integrates a voltage-controlled Josephson junction field-effect transistor (JJFET) selector with a ferroelectric superconducting quantum interference device (FeSQUID) storage element, hereafter termed JFS-CryoMem. The JJFET provides gate-controlled cell selection, whereas the FeSQUID stores information in stable remanent-polarization states. JFS-CryoMem features separate read and write path mechanisms that support nondestructive readout and independent optimization of programming and sensing conditions. The architecture is evaluated using experimentally calibrated compact models that reproduce the measured electrical characteristics of both constituent devices. We demonstrate selective programming using a half-bias scheme, nonvolatile state retention, and distinguishable readout in a $4 \times 4$ array while accounting for the selected cell and all unselected parallel branches. We then extend the analysis to arrays up to $16 \times 16$ and examine how array scaling alters current distribution, column-equivalent resistance, readout separation, required bitline current, and read energy. The results reveal the principal sensing and energy tradeoffs associated with larger arrays and identify the operating conditions required to preserve read distinguishability as the array grows. JFS-CryoMem provides a device-to-array framework for cryogenic memory in quantum, high-performance, and space-oriented computing systems.

发表机构

  • University of Tennessee, Knoxville(田纳西大学诺克斯维尔分校)
  • Sandia National Laboratories(桑迪亚国家实验室)

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