发表机构
College of Physical Science and Technology, Xiamen University; School of Integrated Circuits, Xiamen University（厦门大学物理科学与技术学院; 厦门大学集成电路学院）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
提出一种20-kV 4H-SiC光学注入增强型反向导通IGBT，通过集成LED提供光生载流子，抑制回跳并降低导通电压，同时减少MOS单元数量并改善关断性能。
AI 中文摘要
本文提出了一种20-kV 4H-SiC光学注入增强型反向导通IGBT（OIE-RC-IGBT），具有无回跳工作和低导通电压的特性。在栅极结构中集成了发光二极管（LED），以在正向导通期间提供光学注入。发射的光在载流子存储层（CSL）和漂移区中产生高浓度的光生载流子，从而降低JFET和漂移区的电阻并增加器件电流。因此，集电极侧的P+/N结更早导通，有效抑制了回跳效应，并促进了向双极导通的过渡。在双极导通建立后，光生载流子进一步增强电导调制，从而降低导通电压。TCAD仿真结果表明，与常规RC-IGBT（C-RC-IGBT）相比，所提出的器件实现了无回跳工作，同时将所需的MOS单元数量从25个减少到5个。此外，导通电压、关断下降时间和关断能量损耗分别降低了22.37%、25.06%和19.69%。这些结果展示了光学注入在改善超高压SiC RC-IGBT的导通和关断性能方面的潜力。
英文摘要
This letter proposes a 20-kV 4H-SiC optical-injection-enhanced reverse-conducting IGBT (OIE-RC-IGBT) with snapback-free operation and low on-state voltage. Light-emitting diodes (LEDs) are integrated into the gate structure to provide optical injection during forward conduction. The emitted light generates a high concentration of photogenerated carriers in the carrier-storage layer (CSL) and drift region, thereby reducing the resistance of the JFET and drift regions and increasing the device current. Consequently, the collector-side P+/N junction is turned on earlier, effectively suppressing the snapback effect and facilitating the transition to bipolar conduction. After bipolar conduction is established, the photogenerated carriers further enhance conductivity modulation, resulting in a reduced on-state voltage. TCAD simulation results show that, compared with the conventional RC-IGBT (C-RC-IGBT), the proposed device achieves snapback-free operation while reducing the required number of MOS cells from 25 to 5. Moreover, the on-state voltage, turn-off fall time, and turn-off energy loss are reduced by 22.37%, 25.06%, and 19.69%, respectively. These results demonstrate the potential of optical injection for improving the conduction and turn-off performance of ultrahigh-voltage SiC RC-IGBTs.
Comments4 pages, 7 figures, 1 table
