发表机构
University of Central Florida（中佛罗里达大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文通过统一的伴随优化框架逆向设计硅纳米束腔，针对T中心和Al1中心实现高协同性自旋-光子界面，获得高达3.25×10^6的品质因数和超过99.6%的腔耦合发射分数，并验证了制造鲁棒性，为可扩展量子网络提供了首个Al1中心腔设计。
AI 中文摘要
硅中的电信波段自旋缺陷通过将可扩展的硅光子学与基于自旋的量子存储和多量子比特寄存器相结合，为集成量子网络提供了一个有吸引力的平台。T中心和最近展示的Al1中心尤其有前景，但它们有限的相干零声子发射需要强腔增强以实现高效的自旋-光子界面。在此，我们使用一个统一的伴随优化框架，针对珀塞尔增强、共振对齐和光子提取，对这两种中心的硅纳米束腔进行逆向设计。对于每个发射体，对称腔最大化珀塞尔增强，而非对称腔提供到集成波导的方向性耦合。三维时域有限差分模拟得出负载品质因数高达3.25×10^6，珀塞尔因子高达1.43×10^5，协同性约为280-5000，对应的腔耦合发射分数超过99.6%。非对称腔将约90%的发射功率引导到单个片上波导中，同时保持协同性高于280。在纳米级制造扰动下，所有四种设计都保持在高协同性区域，并且当腔品质因数被限制为现实的吸收限制值10^5时，高协同性仍然持续。这一统一的、与制造兼容的框架为硅电信自旋-光子界面建立了一条可扩展的腔设计路线，并且据我们所知，是Al1中心的第一个腔设计。
英文摘要
Telecom-band spin defects in silicon offer a compelling platform for integrated quantum networks by combining scalable silicon photonics with spin-based quantum memories and multiqubit registers. The T center and recently demonstrated Al1 center are particularly promising, but their limited coherent zero-phonon emission requires strong cavity enhancement for efficient spin-photon interfaces. Here, we inverse-design silicon nanobeam cavities for both centers using a unified adjoint-optimization framework targeting Purcell enhancement, resonance alignment, and photon extraction. For each emitter, symmetric cavities maximize Purcell enhancement, while asymmetric cavities provide directional coupling to an integrated waveguide. Three-dimensional finite-difference time-domain simulations yield loaded quality factors up to 3.25 x 10^6, Purcell factors up to 1.43 x 10^5, and cooperativities of approximately 280-5000, corresponding to cavity-coupled emission fractions exceeding 99.6%. The asymmetric cavities direct approximately 90% of emitted power into a single on-chip waveguide while maintaining cooperativity above 280. Under nanometer-scale fabrication perturbations, all four designs remain within the high-cooperativity regime, and high cooperativity persists when the cavity quality factor is constrained to a realistic absorption-limited value of 10^5. This unified, fabrication-compatible framework establishes a scalable cavity-design route for silicon telecom spin-photon interfaces and, to our knowledge, the first cavity designs for the Al1 center.
Comments36 pages, 9 figures
