发表机构
DEVCOM Army Research Laboratory; MIT Institute for Soldier Nanotechnologies; Johns Hopkins University Chemical and Biomolecular Engineering; DEVCOM C5ISR Center; Institute of Physics & Center for Integrated Sensor Systems (SENS), University of the Bundeswehr Munich（美国陆军研发司令部陆军研究实验室; 麻省理工学院士兵纳米技术研究所; 约翰斯·霍普金斯大学化学与生物分子工程系; 美国陆军研发司令部C5I中心; 联邦国防军慕尼黑大学物理研究所与集成传感器系统中心）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究利用规模化PtSe2薄膜实现室温红外偏振光响应，通过器件几何形状调控光电流分布，区分对称光电流与光热贡献，为偏振红外像素设计提供新思路。
AI 中文摘要
偏振敏感光电探测器提供了超越传统强度型探测器能力的多维光学信息。贵金属二硫属化物PtSe2因其强自旋轨道耦合、材料稳定性、可定制的宽带偏振响应以及与后端硅集成广泛基底的直接兼容性，为可调偏振探测提供了独特机遇。在本工作中，我们展示了使用可规模化、原位生长、大面积PtSe2薄膜实现的室温近红外至中波长红外偏振光响应，并表明测得的偏振响应受器件几何形状重塑。有限元电流流模拟再现了偏振敏感响应的观测空间重分布，并将横向偏振响应定位于像素中心附近。这种几何使能分离允许波长相关的激光光斑扫描区分对称允许的光电流与接触邻近、二向色性介导的光热贡献。在近红外波长下，我们观察到与线性二向色光热电电流一致的空间响应，而中波长红外测量揭示了斜入射下的螺旋度依赖光热贡献。这些结果将像素边界工程确定为可规模化PtSe2偏振敏感红外像素的设计杠杆和诊断工具。
英文摘要
Polarization-sensitive photodetectors provide multi-dimensional optical information beyond the capabilities of traditional intensity-based detectors. The noble metal dichalcogenide PtSe2 presents unique opportunities for tunable polarization detection due to its strong spin-orbit coupling, material stability, customizable broadband polarization responses, and direct compatibility with a wide range of substrates for back-end-of-line silicon integration. In this work, we demonstrate room-temperature near-infrared to mid-wavelength infrared polarization photoresponses using scalable, as-grown, wide-area PtSe2 films, and we show that the measured polarization response is reshaped by device geometry. Finite-element current-flow simulations reproduce the observed spatial redistribution of the polarization-sensitive response and localize the transverse polarization response near the pixel center. This geometry-enabled separation allows wavelength-dependent laser spot scans to distinguish symmetry-allowed photocurrents from contact-proximate, dichroism-mediated photothermal contributions. At near-infrared wavelengths, we observe spatial response that is consistent with linear-dichroic photothermoelectric currents, whereas mid-wavelength infrared measurements reveal a helicity-dependent photothermal contribution under oblique illumination. These results identify pixel boundary engineering as both a design lever and a diagnostic tool for scalable PtSe2 polarization-sensitive infrared pixels.
Comments31 pages, 13 figures
