发表机构
University of Central Florida; Research Institute for Synchrotron Radiation Science, Hiroshima University; Northeastern University; Quantum Materials and Sensing Institute, Northeastern University; S.N. Bose National Center for Basic Sciences; Institute of Low Temperature and Structure Research, Polish Academy of Sciences（中佛罗里达大学; 广岛大学同步辐射科学研究所; 东北大学; 东北大学量子材料与传感研究所; S.N. 玻色基础科学国家中心; 波兰科学院低温结构研究所）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究通过ARPES和DFT计算发现EuZn2As2在TN=19 K附近的电阻异常源于自旋散射而非费米面重构，磁场可抑制该异常。
AI 中文摘要
磁阻材料对于磁存储器件和自旋电子器件的发展至关重要。近年来，反铁磁EuX2Pn2化合物（其中X为过渡金属，Pn为磷族元素）因其在Neel温度（TN）附近表现出异常霍尔效应行为和显著的电阻异常而受到广泛研究关注。这些磁输运现象被解释为短程铁磁涨落、磁极化子形成、倾斜自旋构型以及电子结构中随温度变化的金属-绝缘体转变。在此，我们报道了在EuZn2As2中于TN = 19 K附近观察到这种显著的电阻率异常。我们展示了通过施加面内和面外磁场可以抑制该异常。为了进一步解释所观察到的输运行为的起源，我们结合角分辨光电子能谱（ARPES）和第一性原理密度泛函理论（DFT）计算研究了随温度变化的电子结构，结果显示在费米能级附近跨越TN时能带仅有有限的修改。电子结构的这种不参与表明上述输运性质源于自旋散射，而非费米面重构。
英文摘要
Magnetoresistive materials have been tremendously important for the development of magnetic memory storage and spintronic devices. Recently, the antiferromagnetic EuX2Pn2 compounds, with X being a transition metal and Pn being a pnictogen, have seen intensive research interest due to their unusual anomalous Hall effect behavior and pronounced resistive anomaly near the Neel temperature (TN). These magnetotransport phenomena have been interpreted in the context of shortranged ferromagnetic Structuations, magnetic polaron formation, canted spin configurations, and temperature dependent metal insulator transitions in the electronic structure. Here, we report the observation of such a pronounced resistivity anomaly in EuZn2As2 near TN = 19 K. We demonstrate the suppression of this anomaly using applied magnetic fields, both in plane and out of plane. To further interpret the origin of the observed transport behavior, we studied the temperature dependent electronic structure using combined angle resolved photoemission spectroscopy (ARPES) and first principles density functional theory (DFT) calculations, which exhibits limited modifications to the bands across TN away from the Fermi energy. This lack of involvement of the electronic structure indicates a spin-scattering origin of the aforementioned transport properties, rather than a reconstruction of the Fermi surface.
Comments12 pages, 7 figures, supplementary material included
Journal refPhysical Review B 114, 105140 (2026)
