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本研究利用负微分电阻并通过优化偏置电路设计，实现了超导NbN HEB混频器变频增益的显著提升，预测可额外获得数分贝增益。
AI 中文摘要
本研究探讨了如何利用负微分电阻（NDR）来增强超导氮化铌（NbN）热电子辐射热计（HEB）混频器的变频增益。传统HEB操作因热惯性与偏置线电抗相互作用引起的寄生振荡而避免NDR区域。最近的实验结果表明，减小偏置T型网络电感可抑制这些振荡，并实现在NDR区域内的稳定偏置，从而将混频器变频增益提升至正微分电阻（PDR）偏置下可达到的水平之上。利用集总热-电模型，我们解释了这些实验发现，推导了NDR偏置操作的稳定性条件，并预测了通过优化偏置电路设计可实现的未来性能极限。我们的结果表明，进一步减小偏置电感并结合适当的负载线条件，可在保持实用中频带宽的同时获得数分贝的额外增益。
英文摘要
This work investigates how negative differential resistance (NDR) can be utilized to enhance conversion gain in superconducting niobium nitride (NbN) hot-electron bolometer (HEB) mixers. Conventional HEB operation avoids NDR regions due to parasitic oscillations caused by interactions between thermal inertia and bias-line reactance. Recent experimental results show that reducing the bias-T inductance suppresses these oscillations and enables stable biasing within the NDR regime, thereby increasing the mixer conversion gain beyond levels achievable under positive differential resistance (PDR) bias. Using a lumped thermal-electrical model, we interpret these experimental findings, derive stability conditions for NDR-biased operation, and predict the future performance limits achievable through optimized bias circuit designs. Our results indicate that further reductions in bias inductance, combined with appropriate load-line conditions, could yield several decibels of additional gain while maintaining practical IF bandwidths.
Comments5 pages, 7 figure, 1 table, Presented at the Applied Superconductivity Conference 2026
