电压控制MTJ-CMOS神经元模拟可调Izhikevich启发动力学
A Voltage-controlled MTJ-CMOS Neuron Emulating Tunable Izhikevich-Inspired Dynamics
浏览论文内容
中文总结 AI 辅助
本文提出一种结合电压控制磁隧道结与CMOS电路的可重构Izhikevich神经元,实现五种放电模式,能耗145.44 fJ/尖峰,推理尖峰活动降低88.6%。
中文摘要 AI 辅助
生物神经元展现出多样的放电动力学,能够实现自适应和刺激依赖的信号传导,然而在硬件中重现这些动力学一直是一个持久的挑战。在本工作中,我们提出了一种受Izhikevich启发的可重构神经元,将电压控制磁隧道结(V-MTJ)动力学与CMOS电路进行协同设计。所提出的架构将V-MTJ的兴奋性动力学(通过可调能量景观实现)与CMOS恢复动力学相结合,以产生五种不同的神经元放电模式,这些模式具有不同的尖峰、爆发和响应特性。我们的结果基于实测的V-MTJ特性和使用商用GlobalFoundries 22纳米FD-SOI CMOS技术的电路仿真,显示每次尖峰的平均能耗为145.44飞焦耳。算法仿真进一步表明,这些放电动力学可将推理尖峰活动减少高达88.6%,同时保持基线分类准确率。这些结果凸显了V-MTJ/CMOS可重构神经元在减少计算活动以及实现紧凑、节能的脑启发计算系统方面的潜力。
英文摘要
Biological neurons exhibit diverse firing dynamics that enable adaptive and stimulus-dependent signalling, yet reproducing these dynamics in hardware has remained an enduring challenge. In this work, we present an Izhikevich- inspired reconfigurable neuron that co-designs voltage-controlled magnetic tunnel junction (V-MTJ) dynamics with CMOS circuitry. The proposed architecture combines V-MTJ excitability dynamics, enabled by a tunable energy landscape, with CMOS recovery dynamics to generate five distinct neuronal firing pat- terns with different spiking, bursting and response characteristics. Our results, based on measured V-MTJ characteristics and circuit simulations using com- mercial GlobalFoundries 22-nm FD-SOI CMOS technology, show an average energy consumption of 145.44 fJ per spike. Algorithmic simulations further show that these firing dynamics reduce inference spike activity by up to 88.6% while maintaining baseline classification accuracy. These results highlight the potential of V-MTJ/CMOS reconfigurable neurons to reduce computational activity and enable compact, energy-efficient brain-inspired computing systems.
发表机构
- University of Wisconsin–Madison(威斯康星大学麦迪逊分校)
- Northwestern University(西北大学)
- George Mason University(乔治梅森大学)
机构由 AI 辅助整理,请以论文原文为准。