发表机构
Department of Electrical Engineering, IIT Ropar（旁遮普邦鲁帕加尔印度理工学院电气工程系）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本工作通过非均匀量子阱和势垒厚度工程，结合自洽Preisach铁电模型与NEGF方法，在HfO₂基多量子阱FTJ中实现了TER达1×10⁸%和RA低至1 Ω·cm²的优异性能，并证明弹性散射可进一步改善性能。
AI 中文摘要
基于HfO$_2$的铁电隧道结（FTJ）是可扩展非易失性存储器的有前景候选，但同时实现高隧穿电致电阻比（TER）和低电阻-面积（RA）乘积仍然具有挑战性。为解决这一挑战，本工作通过将基于Preisach的自洽铁电（FE）模型与相干和非弹性非平衡格林函数（NEGF）形式相结合，在基于HfO$_2$的多量子阱FTJ中引入了非均匀量子阱（QW）和势垒厚度工程。非均匀阱和势垒配置由于在低电阻态（LRS）中紧密间隔的宽共振态以及在高电阻态（HRS）中更大的间隔，产生了广泛的FTJ设计空间，导致强极化依赖的共振隧穿，TER达到$\mathbf{1\times10^{8}\\%}$量级，LRS的RA乘积在读取偏置和存在散射的情况下低至$\mathbf{1~\Omega\cdot\mathrm{cm}^{2}}$。通过将自洽弹性散射纳入NEGF框架，我们还表明弹性散射可以通过逐渐增加紧密间隔共振的重叠来积极影响非均匀FTJ的TER和RA性能。总体而言，结果确立了非均匀QW和势垒厚度作为控制共振态对齐并在基于HfO$_2$的多量子阱FTJ中实现高TER和低RA的有利组合的有效且鲁棒的设计参数。
英文摘要
HfO$_2$-based ferroelectric tunnel junctions (FTJs) are promising candidates for scalable non-volatile memory, but simultaneously achieving a high tunneling electro-resistance ratio (TER) and a low resistance-area (RA) product remains challenging. To address this challenge, this work introduces non-uniform quantum well (QW) and barrier thickness engineering in HfO$_2$-based multi-QW FTJs using a self-consistent Preisach-based ferroelectric (FE) model integrated with the coherent and inelastic non-equilibrium Green's function (NEGF) formalism. The non-uniform well and barrier configuration produces a wide range of FTJ design landscapes due to closely spaced, broad resonant states in the low resistance state (LRS) and a larger separation in the high resistance state (HRS), resulting in strong polarization-dependent resonant transmission with TER reaching the order of $\mathbf{1\times10^{8}\%}$ and an LRS RA product as low as $\mathbf{1~Ω\cdot\mathrm{cm}^{2}}$ at read bias and in the presence of scattering. By incorporating self-consistent elastic scattering into the NEGF framework, we also show that elastic scattering can positively influence the TER and RA performance of non-uniform FTJs by progressively increasing the overlap of the closely spaced resonances. Overall, the results establish non-uniform QW and barrier thickness as an effective and robust design parameter for controlling resonant-state alignment and achieving a favorable combination of high TER and low RA in HfO$_2$-based multi-QW FTJs.
Comments7 pages, 10 figures, journal
