外延La$_{0.67}$Sr$_{0.33}$MnO$_3$/SrMnO$_3$/La$_{0.67}$Sr$_{0.33}$MnO$_3$多层膜的电流-电压特性与阻变行为
Current-voltage characteristics and resistive switching in epitaxial La$_{0.67}$Sr$_{0.33}$MnO$_3$/SrMnO$_3$/La$_{0.67}$Sr$_{0.33}$MnO$_3$ multilayer
- School of Physical Sciences, Jawaharlal Nehru University（贾瓦哈拉尔·尼赫鲁大学物理科学学院）
- Special Centre for Nanoscience, Jawaharlal Nehru University（贾瓦哈拉尔·尼赫鲁大学纳米科学特别中心）
机构由 AI 辅助整理，请以论文原文为准。
AI总结：
本研究探究不同衬底对外延La0.67Sr0.33MnO3/SrMnO3/La0.67Sr0.33MnO3多层膜电流-电压特性的影响，发现Si(100)衬底上薄膜呈现显著非对称阻变行为，电阻开关比约10，有望用于存储与忆阻器件。
AI中文摘要：
本研究探讨了由La$_{0.67}$Sr$_{0.33}$MnO$_3$（25 nm）/SrMnO$_3$（70 nm）/La$_{0.67}$Sr$_{0.33}$MnO$_3$（25 nm）组成的外延多层膜的结构性质和电流-电压（$I$-$V$）特性，该多层膜生长在不同衬底上，即SrTiO$_3$(100)、LaAlO$_3$(100)和Si(100)。所用衬底不仅与薄膜材料具有不同的化学成分，而且具有不同的晶格参数，这会显著调控界面处的材料化学和晶格应变。我们的$I$-$V$测量揭示了依赖于衬底的明显电学行为。生长在氧化物SrTiO$_3$(100)和LaAlO$_3$(100)衬底上的多层膜表现出规则的$I$-$V$特性，在低施加电压下具有轻微的非线性。相比之下，以Si(100)为衬底的多层膜在室温下表现出大的不对称性和显著的阻变（RS）行为，观察到高阻态（HRS）与低阻态（LRS）之间的电阻比约为10。虽然观察到的$I$-$V$行为对衬底诱导的界面无序和SrMnO$_3$带隙内陷阱带的形成敏感，但本结果在未来的存储和忆阻器件中具有潜在应用。
英文摘要：
In present study, we investigate the structural properties and current-voltage ($I$-$V$) characteristics of an epitaxial multilayer composed of La$_{0.67}$Sr$_{0.33}$MnO$_3$ (25 nm)/SrMnO$_3$ (70 nm)/La$_{0.67}$Sr$_{0.33}$MnO$_3$ (25 nm), grown on different substrates i.e., SrTiO$_3$(100), LaAlO$_3$(100), Si (100). The used substrates not only have different chemical compositions in line with the film materials, also they have different lattice parameters which would tune the material chemistry and lattice strain at the interface significantly. Our $I$-$V$ measurements reveal distinct electrical behaviors depending on the substrate. The multilayers grown on oxide SrTiO$_3$(100) and LaAlO$_3$(100) substrates exhibit regular $I$-$V$ with slight nonlinearity at low applied voltages. In contrast, $I$-$V$ in multilayer with Si(100) substrate exhibits large asymmetry and notable resistive switching (RS) behavior at room temperature, where a resistance ratio around 10 between the high resistance state (HRS) and low resistance state (LRS) is observed. While the observed $I$-$V$ behavior is sensitive to substrate-induced interfacial disorder and formation of trap bands within bandgap of SrMnO$_3$, the present results have potential applications in future memory and memristive devices.
