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基于铁电约瑟夫森场效应晶体管的高度可扩展无选择器低温存储阵列

Highly Scalable Selectorless Cryogenic Memory Array Using Ferroelectric Josephson Field-Effect Transistors

Saheeb Ahmad, Shamiul Alam

arXiv 2609.30672首次发表:更新:

发表机构

Clemson University(克莱姆森大学)

机构由 AI 辅助整理,请以论文原文为准。

AI 中文总结

本研究利用铁电约瑟夫森场效应晶体管构建无需选择器和感测电路的高度可扩展、超低功耗非易失性低温存储阵列,以满足大规模量子计算机的存储需求。

AI 中文摘要

满足低温环境温度、速度和能量需求的可扩展存储系统对于大规模量子计算机的发展至关重要,也可能有益于高性能计算和太空应用。然而,现有的低温存储技术往往存在可扩展性有限、运行速度低和/或功耗高的问题,限制了目标应用的可扩展性。铁电约瑟夫森场效应晶体管(Fe-JoFETs)结合了铁电极化与约瑟夫森结的超导特性,提供了一种有前景的解决方案。铁电层实现非易失性存储能力,而约瑟夫森结支持高速、节能的操作。在这项工作中,我们利用Fe-JoFETs开发了一种高度可扩展、超低功耗、非易失性的低温存储阵列,该阵列无需额外的选择器件即可实现随机访问。此外,Fe-JoFET的超导组件在读取过程中提供二元决策,消除了对感测外围电路的需求。我们首先为Fe-JoFETs开发了一个基于物理的Verilog-A紧凑模型,并使用该模型验证了所提出存储阵列的功能。通过同时消除选择器和感测电路,所提出的存储架构比现有技术具有更高的可扩展性。该存储器的超低功耗操作也使其与低温应用的严格功率预算兼容。

英文摘要

Scalable memory systems that satisfy the temperature, speed, and energy requirements of cryogenic environments are essential for the development of large-scale quantum computers. They may also benefit high-performance computing and space applications. However, existing cryogenic memory technologies often suffer from limited scalability, low operating speed, and/or high power consumption, restricting the scalability of target applications. Ferroelectric Josephson field-effect transistors (Fe-JoFETs), which combine ferroelectric polarization with the superconducting properties of Josephson junctions, offer a promising solution. The ferroelectric layer enables nonvolatile storage capability, while the Josephson junction supports high-speed, energy-efficient operations. In this work, we leverage Fe-JoFETs to develop a highly scalable, ultra-low-power, nonvolatile cryogenic memory array that does not need additional selector devices for random access. Moreover, the superconducting component of Fe-JoFET provides a binary decision during read, eliminating the need for sensing peripheral circuitry. We first develop a physics-based Verilog-A compact model for Fe-JoFETs and use it to verify the functionality of the proposed memory array. By eliminating both selector and sensing circuitry, the proposed memory architecture offers higher scalability than existing technologies. The ultra-low-power operation of this memory also makes it compatible with strict power budgets of cryogenic applications.

Comments8 pages, 4 Figures, 1 Table

论文原文

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