p型Cr2O3集成于具有2.5 kV击穿电压的超宽禁带AlGaN PolFET
Integration of p-type Cr2O3 on Ultra-Wide Bandgap AlGaN PolFETs with 2.5 kV Breakdown Voltage
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中文总结 AI 辅助
本研究将室温溅射p型Cr2O3作为P-N异质结栅极集成于超宽禁带AlGaN极化梯度场效应晶体管，实现2.5 kV击穿电压和低导通电阻，为高铝组分AlGaN功率与射频器件提供低热预算栅极技术。
中文摘要 AI 辅助
我们展示了采用室温溅射p型氧化物Cr2O3作为P-N异质结栅极的超宽禁带（UWBG）AlGaN极化梯度场效应晶体管（PolFET），与传统的肖特基栅极相比，该结构实现了优异的横向器件击穿场管理。采用反向梯度n-AlGaN接触层的器件获得了创纪录的低接触电阻Rc为0.56 Ω-mm。Cr2O3栅极表现出大于3.5 V的开启电压VON，且相对于肖特基栅极具有+1.63 V的正阈值电压偏移，显示出P-N结增强的沟道耗尽效应。所制造的器件表现出高最大电流Imax（590 mA/mm）和3×10^7的ION/IOFF比。器件展示了最先进的击穿电压VBR>2.5 kV，比导通电阻为11.2 mΩ-cm²（LGD=9.55 μm，平均击穿场>2.5 MV/cm），而较短栅漏间距的器件展示了高达5.3 MV/cm的击穿场，比导通电阻为0.28 mΩ-cm²。这些结果表明溅射p-Cr2O3是一种可行的、低热预算的P-N结栅极技术，适用于高铝组分AlGaN晶体管在射频和电力电子中的应用。
英文摘要
We demonstrate UWBG AlGaN polarization-graded field-effect transistors (PolFETs) incorporating room-temperature sputtered p-type oxide Cr2O3 as a P-N heterojunction gate, enabling superior field management for lateral device breakdown compared to conventional Schottky gates. Devices using reverse-graded n-AlGaN contact layers achieved a record-low Rc of 0.56 Ω-mm. The Cr2O3 gate exhibits a turn-on voltage VON > 3.5 V and a positive threshold voltage shift of +1.63 V relative to Schottky gates, displaying enhanced channel depletion from the P-N junction. Fabricated devices show high Imax (590 mA/mm) and ION/IOFF of 3x10^7. Devices exhibited state-of-the-art VBR > 2.5 kV with 11.2 mΩ-cm^2 specific on-resistance (LGD = 9.55 um, average breakdown field > 2.5 MV/cm), while shorter gate-drain devices showed high breakdown fields up to 5.3 MV/cm with 0.28 mΩ-cm^2 specific on-resistance. These results showcase sputtered p-Cr2O3 as a viable, low thermal budget P-N junction gate technology for high-Al-composition AlGaN transistors in RF and power electronics.
发表机构
- Ohio State University（俄亥俄州立大学）
- University of California, Santa Barbara（加州大学圣塔芭芭拉分校）
- Sandia National Laboratories（桑迪亚国家实验室）
机构由 AI 辅助整理，请以论文原文为准。
