发表机构
University of Warsaw; CIC nanoGUNE; Autonomous University of Yucatan; Simune Atomistics; Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST; Warsaw University of Technology; BCMaterials, Basque Center for Materials, Applications and Nanostructures, UPV/EHU Science Park; Ikerbasque, Basque Foundation for Science（华沙大学; nanoGUNE研究中心; 尤卡坦自治大学; Simune原子学公司; 加泰罗尼亚纳米科学和纳米技术研究所（ICN2），西班牙国家研究委员会和巴塞罗那独立系统研究所; 华沙理工大学; 巴斯克材料、应用和纳米结构中心，巴斯克国立埃斯托大学科学园; 伊克尔巴斯科，巴斯克科学基金会）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究通过紧束缚模型和非平衡格林函数方法，揭示高磁场下硅纳米管结的透射特性强烈依赖几何结构，且与碳纳米管结存在定性差异。
AI 中文摘要
我们利用紧束缚模型结合非平衡格林函数形式，并通过Peierls替换引入磁场，研究了高达60 T的高磁场下硅纳米管（SiNT）结中的相干量子输运。我们考虑了金属性纳米管（6,0）+（6,0）和半导体性纳米管（9,9）+（9,9）的结，并考察了重叠长度、管间距离、磁场方向和场强对电子透射的影响。与碳纳米管结相比，SiNT体系表现出不规则的透射振荡，且不出现高导电的门控态。透射对垂直于纳米管轴的磁场的敏感性远高于对平行磁场的敏感性，而增加场强会逐步改变透射谱。增加重叠长度导致透射振荡更频繁，而增加管间距离则改变振荡的位置和幅度，但不改变其整体特征。总体而言，两类结（涉及金属性和半导体性纳米管）观察到相似的趋势。然而，在半导体性纳米管的结中，观察到独特的额外场依赖的带内透射特征。这些结果表明，SiNT结的磁场响应强烈受其几何结构控制，并与原始碳纳米管结的响应在性质上不同。
英文摘要
We investigate coherent quantum transport through silicon nanotube (SiNT) junctions in high magnetic fields up to 60 T using a tight-binding model combined with the non-equilibrium Green's function formalism, and magnetic field included via Peierls substitution. We consider junctions of metallic nanotubes (6,0)+(6,0) and semiconducting ones (9,9)+(9,9), and examine the effects of the overlap length, inter-tube distance, magnetic-field direction, and field strength on the electronic transmission. In contrast to carbon nanotube junctions, the SiNT systems exhibit irregular transmission oscillations and do not show the emergence of highly conductive gateway states. The transmission is substantially more sensitive to a magnetic field perpendicular to the nanotube axis than to a parallel field, while increasing the field strength progressively modifies the transmission spectrum. Increasing the overlap length results in more frequent transmission oscillations, whereas increasing the inter-tube distance modifies their positions and amplitudes without changing their overall character. Generally, similar trends are observed for both types of junctions, involving metallic and semiconducting nanotubes. However, in the junction of semiconducting nanotubes, one observes peculiar additional field-dependent in-gap transmission features. These results demonstrate that the magnetic-field response of SiNT junctions is strongly governed by their geometry and differs qualitatively from that of pristine carbon nanotube junctions.
