发表机构
University of South Florida（南佛罗里达大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
通过控制Sn-S化学气相沉积参数，实现了横向尺寸达350微米的大面积SnS晶体生长，并表征了其形貌与拉曼特性，为光电和器件研究提供了实用生长窗口。
AI 中文摘要
一硫化锡（SnS）是一种具有强面内各向异性的层状IV-VI族半导体，在光电和铁性应用中具有广阔前景。然而，获得大面积、连续且形貌规整的SnS晶体仍然具有挑战性。在此，我们报道了使用分离的元素Sn和S前驱体通过化学气相沉积生长大面积SnS晶体的方法。通过控制前驱体温度、源位置、衬底温度、载气流量和氢气流量，我们获得了横向尺寸接近350微米的SnS晶体。优化后的生长条件为：Sn源温度约750摄氏度，S源温度约230摄氏度，衬底温度维持在650-680摄氏度附近，Ar/H2流量为120/10 sccm。X射线衍射显示主导的SnS（111）反射，在测量灵敏度范围内未检测到可分辨的二次结晶锡硫化物相。拉曼光谱揭示了六个特征SnS声子模式，分别位于约39.3、48.8、95.2、165.0、193.1和219.1 cm^-1处。特别是，接近39和49 cm^-1的低频模式被清晰分辨，其FWHM值分别约为2.52和2.37 cm^-1。SEM和AFM测量进一步显示大面积连续晶体和相对光滑的纳米级表面。在云母上生长产生更规则的方形和矩形薄片，横向尺寸接近300 x 300微米，而在SiO2/Si上生长的晶体边缘更频繁地出现断裂或不规则。这些结果展示了获得适合进一步光学、电学和器件研究的大面积SnS晶体的实用生长窗口。
英文摘要
Tin monosulfide (SnS) is a layered IV-VI semiconductor with strong in-plane anisotropy and promising properties for optoelectronic and ferroic applications. However, obtaining large, continuous, and morphologically well-defined SnS crystals remains challenging. Here, we report the growth of large-area SnS crystals using chemical vapor deposition with separate elemental Sn and S precursors. By controlling the precursor temperatures, source positions, substrate temperature, carrier-gas flow, and hydrogen flow, we obtain SnS crystals with lateral dimensions approaching 350 micrometers. The optimized growth occurs with the Sn source at approximately 750 degrees C, the S source at approximately 230 degrees C, and the substrate maintained near 650-680 degrees C, using Ar/H2 flow rates of 120/10 sccm. X-ray diffraction shows a dominant SnS (111) reflection with no detectable secondary crystalline tin-sulfide phase within the measurement sensitivity. Raman spectroscopy reveals six characteristic SnS phonon modes at approximately 39.3, 48.8, 95.2, 165.0, 193.1, and 219.1 cm^-1. In particular, the low-frequency modes near 39 and 49 cm^-1 are clearly resolved with FWHM values of approximately 2.52 and 2.37 cm^-1, respectively. SEM and AFM measurements further show large continuous crystals and a relatively smooth nanoscale surface. Growth on mica produces more regular square and rectangular flakes, with lateral dimensions approaching 300 x 300 micrometers, while crystals grown on SiO2/Si are more frequently fractured or irregular at their edges. These results demonstrate a practical growth window for obtaining large-area SnS crystals suitable for further optical, electrical, and device studies.
