发表机构
University of Science and Technology of China; New York University（中国科学技术大学; 纽约大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究提出电压作为关键控制参数，在STM-BJ中实现电可调的单分子等离激元腔，通过抑制损耗并保持模式约束，为强耦合下的量子控制开辟新途径。
AI 中文摘要
强光-物质耦合为修饰分子结构、动力学和光学响应提供了强大框架，然而在单分子水平实现该机制仍是一个核心挑战。扫描隧道显微镜断裂结（STM-BJ）通过结合单分子可寻址性与极端的纳米尺度场约束，提供了一条有前景的路径。然而，实现这种约束的金属环境也引入了显著的等离激元和激子损耗，引发了如何在金属-分子-金属结中实现强耦合的问题。在此，我们确定电压为关键控制参数。我们表明，施加的偏压不仅通过共振电荷输运驱动界面激子的形成，还抑制了其与金属损耗通道的耦合。同时，等离激元腔保持极端的模式约束，而模式的可用性则受到电压的适度调谐。综合这些结果，电压驱动的STM-BJ被确立为电可调的单分子等离激元腔，并为使用强大的STM-BJ工具箱开辟了新途径，包括量子输运、化学动力学追踪、光电子学以及强光-物质耦合下的分子尺度量子控制。
英文摘要
Strong light-matter coupling offers a powerful framework for modifying molecular structure, dynamics, and optical response, yet achieving this regime at the single-molecule level remains a central challenge. Scanning Tunneling Microscope Break Junctions (STM-BJ) provide a promising route by combining single-molecule addressability with extreme nanoscale field confinement. However, the metallic environment that enables such confinement also introduces substantial plasmonic and excitonic losses, raising the question of how strong coupling can be realized in a metal-molecule-metal junction. Here, we identify the voltage as the key control parameter. We show that the applied bias not only drives the formation of an interfacial exciton through resonant charge transport but also suppresses its coupling to metallic loss channels. Simultaneously, the plasmonic cavity retains extreme mode confinement while the availability of modes is moderately tuned by voltage. Together, these results establish voltage-driven STM-BJs as electrically tunable single-molecule plasmonic cavities and open new routes for using the powerful STM-BJ toolbox, including quantum transport, tracking chemical dynamics, optoelectronics, and molecular-scale quantum control under strong light-matter coupling.
