跳变导电及其对氧化物半导体晶体管亚阈值和过渡区输运影响的磁输运测量研究

中文摘要 AI 辅助

本研究通过磁输运测量，包括在不同温度下的霍尔效应和磁阻（MR），直接探测了晶体氧化铟（In2O3）和非晶铟锌氧化物（IZO）晶体管中的电子输运特性。我们首次开发了一种基于低温磁阻测量的亚带隙态密度（DOS）提取方法，该方法同时考虑了干涉效应和轨道收缩效应。磁阻的符号和大小被用作直接证据，以区分跳变导电和自由电子导电这两种主导输运机制。研究发现，晶体In2O3的亚带隙态密度比非晶IZO低两个数量级以上，且跳变位点的局域化半径更小。因此，晶体In2O3不仅提高了载流子迁移率，还通过大幅抑制亚带隙态密度实现了更小的过渡区，从而显著降低了供电电压（VDD）。本研究揭示了结构无序性对氧化物半导体晶体管在亚阈值和过渡区器件运行的关键影响。

英文摘要

In this work, magneto-transport measurements, including Hall effects and magnetoresistance (MR) at various temperatures, are employed to directly probe the electron transport properties in crystalline indium oxide (In2O3) and amorphous indium-zinc oxide (IZO) transistors. For the first time, we develop a subgap density of states (DOS) extraction method based on the MR measurements at low temperature, considering both the interference and orbital shrinkage effects. The sign and magnitude of MR are used as direct evidence to distinguish the dominating transport mechanisms between hopping conduction and free-electron conduction. It is found that crystalline In2O3 exhibits a subgap DOS more than two orders of magnitude lower than that of amorphous IZO, together with a smaller localization radius of hopping sites. As a result, crystalline In2O3 not only enhances the carrier mobility but also significantly reduces the supply voltage (VDD) because of the smaller transition region enabled by the much-suppressed subgap DOS. This study reveals that structural disorder critically influences the device operation in the subthreshold and transition regions of oxide semiconductor transistors.

发表机构

• National Key Laboratory of Advanced Micro and Nano Manufacture Technology and School of Information Science and Electronic Engineering, Shanghai Jiao Tong University（上海交通大学信息科学与电子工程学院）
• School of Integrated Circuits, Huazhong University of Science and Technology（华中科技大学集成电路学院）

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