发表机构
Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides（巴黎萨克雷大学，法国国家科学研究中心，固体物理实验室）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究通过连续引入Stone-Wales缺陷将晶格系统驱动至非晶态，利用拓扑Weaire-Thorpe模型揭示缺陷导致赝带反转和陈数反转，并借助溢出指示器预测了非晶态的拓扑相图。
AI 中文摘要
结构缺陷，如向错和位错，在增殖时会破坏长程晶序。在本工作中，我们通过连续引入可视为位错偶极子的Stone-Wales（SW）缺陷，将系统从装饰蜂窝晶格上的晶态连续驱动到超均匀非晶态。使用拓扑Weaire-Thorpe哈密顿模型描述该系统中的电子，我们证明SW缺陷可引起赝带反转以及相应的陈数反转。利用绝热论证和计算高效的溢出指示器，我们从晶态预测了非晶态的拓扑相图。我们通过基于单个SW缺陷的有效哈密顿量中跳跃的重整化解释了赝带反转的本质。
英文摘要
Structural defects, such as disclinations and dislocations, destroy the long-range crystalline order as they proliferate. In this work, we continuously drive a system from a crystalline state on a decorated honeycomb lattice to a hyperuniform amorphous state, by consecutively introducing Stone-Wales (SW) defects, which can be viewed as dipoles of dislocations. Using a topological Weaire-Thorpe Hamiltonian model to describe electrons in this system, we demonstrate that SW defects can cause pseudo-band inversions and, correspondingly, a reversal of the Chern number. Using adiabatic arguments and a computationally efficient spillage indicator, we predict the topological phase diagram of the amorphous state from the crystalline one. We explain the nature of the pseudo-band inversion through the renormalization of the hopping in an effective Hamiltonian based on a single SW defect.
Comments19 pages, 12 figures
