AI 中文总结
本研究在六方氮化硼中实现拓扑Jackiw-Rebbi态的光子类比，通过反转光栅带边模式顺序形成非色散界面态，该态对制造误差高度容忍，为控制发光缺陷发射提供稳健平台。
AI 中文摘要
当两个拓扑结构不同的光子结构连接时，其交界处会出现一种光学模式。该模式的存在仅取决于这种拓扑差异，而与任一结构的具体尺寸无关。在此，我们在六方氮化硼（hBN）中实现了Jackiw-Rebbi（JR）态的光子类比，该材料承载带负电的硼空位，即光学可寻址的自旋缺陷。我们将两个部分蚀刻的光栅并排连接，在这两个光栅中，辐射带边模式与暗带边模式的顺序发生了反转。角分辨反射率和光致发光测量揭示了这种反转以及交界处的非色散JR态。该态表现出显著的容错性：尽管制造误差高达20纳米，其波长仍位于设计值1纳米范围内，这与系统的数值容差分析预测一致。因此，JR光栅为控制发光缺陷的发射提供了一种稳健、单片集成的平台。
英文摘要
When two photonic structures of different topology are joined, an optical mode appears at their junction. Its existence depends only on this topological difference and not on the precise dimensions of either structure. Here we realize the photonic analogue of a Jackiw-Rebbi (JR) state in hexagonal boron nitride (hBN) hosting negatively charged boron vacancies, optically addressable spin defects. Two partially etched gratings, in which the order of the radiating and dark band-edge modes is reversed, are joined side by side. Angle-resolved reflectivity and photoluminescence reveal this reversal and a non-dispersive JR state at the junction. The state proves remarkably tolerant: despite fabrication errors of up to 20 nm, its wavelength lies within a 1 nm of the design, as predicted by a systematic numerical tolerance analysis. JR gratings therefore offer a robust, monolithic platform for controlling the emission of luminescent defects.
