AI 中文总结
本研究在CMOS兼容Si衬底上的SrTiO$_3$/Fe异质结构中实现了低温电压控制磁性，通过电场调控界面磁各向异性改变磁畴结构，为低功耗磁基器件提供可行材料方案。
AI 中文摘要
低温电子学正成为高性能和低功耗计算应用中快速兴起的研究领域。将纳米磁性元件集成到低温电路中，可增加极具价值的功能，促进器件小型化、降低能耗并引入时间反演对称性破缺。此外，低温环境增强了纳米尺度下的磁性稳定性和开关效率，进一步凸显了低温纳米磁体的潜力。为充分利用这些机遇，磁控制方案需要电流写入之外的替代选项，而电流写入是功耗和小型化方面的主要瓶颈。在这方面，基于电压的磁态门控可大幅提升运行效率和集成密度。在本工作中，我们研究了在CMOS兼容的Si衬底上外延生长的SrTiO$_3$/Fe薄膜异质结构中的低温磁性电压控制（VCM）。我们展示并量化了电压控制的磁畴结构修饰，这与Fe/SrTiO$_3$界面处电场控制的磁各向异性一致。这些发现为开发用于经典和量子计算的下一代基于磁畴的器件提供了可行的材料体系。
英文摘要
Cryogenic electronics forms a rapidly emerging research domain for high-performance and power-efficient computing applications. Incorporating nanomagnetic components in cryogenic circuitry adds highly valuable functionality, facilitating downscaling, reducing energy consumption and introducing time-reversal symmetry breaking. Furthermore, low-temperature environments enhance magnetic stability and switching efficiency at nanoscale dimensions, reinforcing the potential of cryogenic nanomagnets. To fully leverage these opportunities, magnetic control schemes require alternative options to current-based writing, which is the main bottleneck regarding power consumption and downscaling. In this regard, voltage-based gating of the magnetic state could drastically enhance operational efficiency and integration density. In this work, we investigate cryogenic Voltage Control of Magnetism (VCM) in epitaxial SrTiO$_3$/Fe thin film heterostructures on a CMOS compatible Si substrate. We demonstrate and quantify voltage-controlled modifications of the magnetic domain structure, consistent with electric field-controlled magnetic anisotropy at the Fe/SrTiO$_3$ interface. These findings provide a viable material system for the development of next-generation magnetic domain-based devices for classical and quantum computing.
