发表机构
University of Arizona; University of Colorado Boulder; Sandia National Laboratories; Manzano Systems Inc.（亚利桑那大学; 科罗拉多大学博尔德分校; 桑迪亚国家实验室; 马纳佐系统公司）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文在CMOS平台氮化硅声光微结构中利用双谐波谐振实现可见光可编程频移，效率达50%，并具高边带抑制，克服了谐振增强与可编程性的权衡。
AI 中文摘要
扩展原子、离子和固态发射器的量子控制，需要在可批量制造的平台上对高功率可见光进行千兆赫兹频率的光谱控制。氮化硅光子学提供高功率处理能力和CMOS代工厂兼容性，但没有高速调制的内在机制。与压电材料集成可实现声光相位调制，而机械谐振增强使其在千兆赫兹频率下变得高效。然而，单一谐振将调制波形限制为单音，产生贝塞尔函数边带幅度，并将频移效率限制在33.9%。在这里，我们设计了一种氮化硅声光微结构，以支持在1.14 GHz和2.28 GHz处谐波间隔的谐振，每个谐振都与730 nm导波光学模式强光机耦合，从而可以谐振合成定制的非正弦调制波形。通过压电控制两个机械幅度及其相对相位，我们展示了50%到单边带的转换（是单音理论最大值的1.5倍），一个平坦的七线梳，以及具有60 dB载波和53 dB镜像抑制的频移——据我们所知，这是集成调制器报道的最高值。这些器件在200 mm CMOS代工厂制造，我们在来自三个晶圆的36个器件中测量到91.7%的良率，无需后制造调谐。我们还展示了该技术如何轻松扩展到三个或更多谐波。这一结果克服了谐振增强和光谱可编程性之间的权衡，对超精细量子比特的单量子比特门效率提高具有重要意义。
英文摘要
Scaling quantum control for atoms, ions, and solid-state emitters requires gigahertz-frequency spectral control of high-power visible light in a volume-manufacturable platform. Silicon nitride photonics provides high power handling and CMOS-foundry compatibility but has no intrinsic mechanism for high-speed modulation. Integration with piezoelectric materials enables acousto-optic phase modulation, and mechanical resonant enhancement has made it efficient at gigahertz frequencies. However, a single resonance restricts the modulation waveform to a single tone, imposing Bessel-function sideband amplitudes and limiting frequency-shifting efficiency to 33.9%. Here we engineer a silicon nitride acousto-optic microstructure to support harmonically spaced resonances at 1.14 GHz and 2.28 GHz, each strongly optomechanically coupled to a 730 nm guided optical mode, so that tailored non-sinusoidal modulation waveforms can be resonantly synthesized. By piezoelectrically controlling the two mechanical amplitudes and their relative phase, we demonstrate 50% conversion to one sideband (1.5x the single-tone theoretical maximum), a flat seven-line comb, and a frequency shift with 60 dB carrier and 53 dB image suppression - to our knowledge the highest reported for an integrated modulator. The devices are fabricated in a 200 mm CMOS foundry, and we measure 91.7% yield without post-fabrication tuning across 36 devices from three wafers. We also show how the technique can be straightforwardly scaled to three or more harmonics. This result overcomes the trade-off between resonant enhancement and spectral programmability, with important consequences including improved single-qubit gate efficiency for hyperfine qubits.
