发表机构
Frantsevich Institute for Problems in Materials Science of the National Academy of Sciences of Ukraine; Institute of Physics of the Czech Academy of Sciences; Stockholm University; Ye. O. Paton Institute of Materials Science and Welding, National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”; Oles Honchar Dnipro National University; Institute of Physics of the National Academy of Sciences of Ukraine（乌克兰国家科学院弗拉琴科材料科学问题研究所; 捷克科学院物理研究所; 斯德哥尔摩大学; 乌克兰国立技术大学“伊戈尔·西科尔斯基基辅理工学院”叶·奥·帕顿材料与焊接研究所; 阿列斯·洪恰尔第聂伯国立大学; 乌克兰国家科学院物理研究所）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究通过光谱与介电测量及理论计算，揭示了氧化铪-氧化锆纳米颗粒中氧空位浓度与介电常数增强的相关性，并解释了不同组分间的差异。
AI 中文摘要
本工作分析了通过固态有机硝酸盐合成并在空气中退火制备的氧化铪-氧化锆纳米颗粒（化学组成为Hf0.4Zr0.6O2和Hf0.6Zr0.4O2，平均尺寸为7.5 nm）的X射线光电子能谱、衍射谱与介电性质之间的相关性。由X射线衍射光谱确定的纳米颗粒相态为非极性单斜相（42-76质量%）和正交相（56-24质量%）的共存。氧空位浓度通过X射线光电子能谱估算。在嵌入Hf0.4Zr0.6O2纳米颗粒的PVDF基体中，观察到在350-450 K附近介电常数最大值强度的增加，这可能与氧空位浓度的增加有关。基于Landau-Ginzburg-Devonshire理论的理论计算解释了Hf0.4Zr0.6O2纳米颗粒相比Hf0.6Zr0.4O2纳米颗粒介电常数增大的原因。
英文摘要
In this work we analyze correlations of X-ray photoelectron and diffraction spectra, and dielectric properties of hafnia-zirconia nanoparticles (the chemical compositions Hf0.4Zr0.6O2 and Hf0.6Zr0.4O2, and the average size of 7.5 nm) prepared by the solid-state organo-nitrate synthesis and annealed in air. The phase state of the nanoparticles, determined by the X-ray diffraction spectroscopy, is the coexistence of the nonpolar monoclinic (42 - 76 mass %) and orthorhombic (56 - 24 mass %) phases. Concentration of the oxygen vacancies was estimated from the X-ray photoelectron spectroscopy. The increase in the intensity of the dielectric permittivity maximum observed near 350 - 450 K in a PVDF matrix with embedded Hf0.4Zr0.6O2 nanoparticles can be related with an increase in oxygen vacancy concentration. Theoretical calculations, based on Landau-Ginzburg-Devonshire theory, explain the increase of the dielectric permittivity in Hf0.4Zr0.6O2 nanoparticles compared to Hf0.6Zr0.4O2 nanoparticles.
Comments13 pages, 3 figures, To be submitted to the Semiconductor Physics, Optoelectronics and Quantum Electronics
