发表机构
University of Illinois at Urbana-Champaign（伊利诺伊大学厄巴纳-香槟分校）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究提出两带超导体精确理论，应用于陈省身飞镖板绝缘体，发现HK相互作用可诱导超导并导致绝缘体-超导体-绝缘体再入相变，归因于HK相互作用与轨道间配对的融合。
AI 中文摘要
我们为一个具有轨道间配对和能带Hatsugai-Kohmoto（HK）相互作用的两带超导体构建了一个精确理论。我们将此理论应用于陈省身飞镖板绝缘体，并解析计算了配对磁化率和配对关联。我们发现，在先前由BCS理论预测的绝缘相中（配对强度$g$较小，化学势$\u03bc$位于能隙内），HK相互作用可以通过提升双占据能带并使其跨越化学势来诱导超导电性，甚至可能形成陈省身飞镖板超导体。从这种HK诱导的超导体中，我们注意到在显著的参数范围内（HK相互作用强度$U = 1$，$\u03bc = 0.5$），存在绝缘体-超导体-绝缘体的再入相变。我们将再入现象归因于HK相互作用与轨道间配对之间的融合。
英文摘要
We formulate an exact theory for a 2-band superconductor with inter-orbital pairing and band Hatsugai-Kohmoto (HK) interactions. We apply this theory to a Chern dartboard insulator and compute the pair susceptibility and pair correlations analytically. We find that in the insulating phase previously predicted by BCS theory (small pairing strength $g$, chemical potential $μ$ in the gap), the HK interaction can induce superconductivity, and possibly a Chern dartboard superconductor, by lifting the doubly-occupied band and making it cross the chemical potential. From this HK-induced superconductor, we notice that in a significant parameter range (HK interaction strength $U = 1$, $μ= 0.5$), an insulator-superconductor-insulator re-entrant transition exists. We isolate the re-entrance to a conflation between HK interactions and inter-orbital pairings.
Comments10 pages including supplementary material, 5 figures
