面向低地球轨道空间任务的SiPM传感器辐射硬度表征

中文摘要 AI 辅助

本工作对用于空间应用的SiPM器件进行了全面的辐射硬度表征，涉及FBK NUV-HD-MT和NUV-HD-LowCT（尺寸为1×1、3×3和6×6 mm²）以及具有等效有源面积的Hamamatsu S14160 MPPC。总电离剂量（TID）测试在ESA/ESTEC的Co-60设施中进行，硅中的剂量水平高达20 krad，而位移损伤效应则利用Paul Scherrer研究所的100 MeV质子进行评估，通量高达1.12×10¹¹ p/cm²。SiPM中的辐射损伤通过两种主要机制表现：电离能量损失和非电离能量损失（NIEL），后者会增加暗电流和暗计数率。在本工作中，系统地测量了击穿电压、暗电流和淬灭电阻随累积剂量和通量的变化。增益和暗计数率通过表征的电学参数间接测量。两种技术在所有剂量水平下均表现出大部分功能参数的显著稳定性，而暗电流显示出可预测的增加，且在质子辐照下由于位移损伤而更为显著。基于这些结果，FBK和Hamamatsu器件均被确认适用于低地球轨道（LEO）任务环境。

英文摘要

This work presents a comprehensive radiation hardness characterization of SiPM devices for space-based applications: FBK NUV-HD-MT and NUV-HD-LowCT (1$\times$1, 3$\times$3, and 6$\times$6~mm$^2$) and Hamamatsu S14160 MPPCs with equivalent active areas. Total Ionizing Dose (TID) tests were performed at the ESA/ESTEC Co-60 facility with a level of dose up to 20~krad in silicon, while displacement damage effects were evaluated using 100~MeV protons with a fluence up to $1.12\times10^{11}$~p/cm$^2$ at the Paul Scherrer Institute. Radiation damage in SiPMs manifests through two main mechanisms: ionizing energy loss and non-ionizing energy loss (NIEL), which increases dark current and dark count rate. In this work, breakdown voltage, dark current, and quenching resistance were systematically measured as functions of accumulated dose and fluence. Gain and dark count rates were indirectly measured from the characterized electrical parameters. Both technologies exhibit remarkable stability of most of the functional parameters across all dose levels, while dark current shows predictable increases significantly more pronounced under proton irradiation due to displacement damage. Based on these results, both FBK and Hamamatsu devices are confirmed suitable for Low Earth Orbit (LEO) mission environment.

发表机构

• GSSI - Gran Sasso Science Institute（格兰萨索科学研究所）
• INFN - Laboratori Nazionali del Gran Sasso（格兰萨索国家实验室）

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