发表机构
Radboud University; Italian Institute of Technology; Nanyang Technological University; Scuola Normale Superiore; University of Genoa（拉德堡德大学; 意大利理工学院; 南洋理工大学; 比萨高等师范学院; 热那亚大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究通过圆偏振中红外光激发声子模式，在Ni掺杂MnPS3中实现了反铁磁畴壁的确定性控制，揭示了声子诱导有效场及螺旋度不对称的畴动力学机制。
AI 中文摘要
在反铁磁体中，具有不同反铁磁Néel矢量（充当序参量）取向的区域可以共存，从而形成由畴壁分隔的反铁磁畴。这表明反铁磁体可以具备磁存储介质的功能。能否利用这些功能，关键在于能否获得对反铁磁畴壁进行确定性控制的有效手段。在此，我们展示了一种通过晶格动力学工程对范德华反铁磁体Ni掺杂$MnPS_3$中的畴壁进行确定性控制的方法。通过用圆偏振中红外光共振激发一对近简并的正交红外活性$A_u$和$B_u$声子模式，我们诱导了180°反铁磁畴的螺旋度依赖性重构，为声子诱导的与Néel序参量共轭的有效场提供了证据。畴动力学表现出显著的螺旋度不对称性，该不对称性由畴壁弹性和缺陷介导的钉扎之间的相互作用所决定，使得微小的声子驱动扰动能够累积成稳定的畴转变。我们的结果确立了动态晶格控制和缺陷工程作为反铁磁序确定性控制的手段。
英文摘要
In an antiferromagnet, areas with different orientations of the antiferromagnetic Néel vector, which plays the role of the order parameter, can coexist, thus forming antiferromagnetic domains separated by domain walls. This suggests that antiferromagnets can possess the functionalities of magnetic storage media. Whether one can benefit from these functionalities crucially depends on the availability of efficient means for deterministic control of antiferromagnetic domain walls. Here, we demonstrate an approach to deterministically control domain walls in the van der Waals antiferromagnet Ni-doped $MnPS_3$ via dynamic engineering of the crystal lattice. By resonantly exciting a pair of nearly degenerate orthogonal infrared-active $A_u$ and $B_u$ phonon modes with circularly polarized mid-infrared light, we induce helicity-dependent reconfiguration of 180° antiferromagnetic domains, providing evidence for a phonon-induced effective field conjugate to the Néel order parameter. The domain kinetics exhibit a pronounced helicity asymmetry governed by the interplay between domain-wall elasticity and defect-mediated pinning, enabling small phonon-driven perturbations to accumulate into stable domain transformations. Our results establish dynamic lattice control and defect engineering as means for deterministic control of antiferromagnetic order.
