非厄米拓扑：来自厄米量子反常霍尔系统中边缘输运的涌现
Non-Hermitian Topology from Edge Transport in Hermitian Quantum Anomalous Hall Systems
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中文总结 AI 辅助
本文证明全局厄米量子反常霍尔系统中，手性边缘模式与扩散边缘模式的相互作用可自然产生非厄米输运，表现为非互易响应和皮肤效应，并通过Landauer-Büttiker模拟在磁性拓扑绝缘体中验证，为固态非厄米拓扑器件提供新途径。
中文摘要 AI 辅助
非厄米物理以其奇异现象如例外点和皮肤效应而闻名，目前最突出的实现方式是在依赖受控增益和损耗的工程系统中。我们在此表明，它也可以自然地作为全局厄米量子反常霍尔系统的内禀输运响应而出现，无需外部非厄米工程。我们证明，单向手性边缘模式与扩散性正常边缘模式之间的相互作用诱导出内禀的非互易输运，可由连续Hatano-Nelson模型描述。因此，非厄米皮肤效应直接编码在实验可及的霍尔棒可观测量中：电化学势和局部热耗散获得依赖于手性的指数空间分布，而纵向电导随系统尺寸指数衰减，霍尔电导保持量子化。利用Landauer-Büttiker模拟，我们确认了这些输运特征，并确定磁性拓扑绝缘体是实现内禀非厄米输运响应的现实平台。我们的结果将非厄米拓扑与介观输运联系起来，为固态系统中非厄米拓扑器件开辟了道路。
英文摘要
Non-Hermitian physics, known for exotic phenomena like exceptional points and the skin effect, has been most prominently realized in engineered systems relying on controlled gain and loss. Here we show that it can also arise naturally as an intrinsic transport response of a globally Hermitian quantum anomalous Hall system, without the need for external non-Hermitian engineering. We show that the interplay between unidirectional chiral edge modes and diffusive normal edge modes induces intrinsic non-reciprocal transport described by a continuum Hatano-Nelson model. Consequently, the non-Hermitian skin effect is encoded directly in experimentally accessible Hall-bar observables: the electrochemical potential and local heat dissipation acquire chirality-dependent exponential spatial profiles, while the longitudinal conductance decays exponentially with system size and the Hall conductance remains quantized. Using Landauer--B{"u}ttiker simulations, we confirm these transport signatures and identify magnetic topological insulators as a realistic platform for an intrinsic non-Hermitian transport response. Our results bridge non-Hermitian topology with mesoscopic transport, opening a pathway toward non-Hermitian topological devices in solid-state systems.
发表机构
- International Center for Quantum Materials, School of Physics, Peking University（北京大学物理学院量子材料国际中心）
- Beijing Academy of Quantum Information Sciences（北京量子信息科学研究院）
- School of Physical Science and Technology, Soochow University（苏州大学物理科学与技术学院）
- Institute for Advanced Study, Soochow University（苏州大学前沿科学高等研究院）
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University（复旦大学纳米电子器件与量子计算研究所）
- Hefei National Laboratory（合肥国家实验室）
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