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剂量不敏感的缺陷工程、载流子动力学及离子注入InGaN/GaN量子阱中可复现的色度调控

Dose-Insensitive Defect Engineering, Carrier Kinetics, and Reproducible Chromaticity Tuning in Ion-Implanted InGaN/GaN Quantum Wells

Quan-Shan Liu, Mason Adshead, Sadia Sheraz, Maddison Coke, Nicholas Lockyer, Richard J. Curry

arXiv 2609.22648首次发表:更新:

发表机构

University of Manchester(曼彻斯特大学)

机构由 AI 辅助整理,请以论文原文为准。

AI 中文总结

本研究通过离子注入和退火调控InGaN/GaN量子阱缺陷,结合速率方程模型揭示载流子动力学,实现从暖黄到冷白蓝的功率密度可调色度输出。

AI 中文摘要

通过离子注入进行的生长后缺陷工程为III-V族合金光子集成中的空间光学轮廓和颜色图案化提供了强大途径。然而,高温退火下深层缺陷饱和与激子恢复的复合动力学机制仍未被充分理解。本文对铟注入InGaN/GaN多量子阱(MQWs)在注入剂量(5E14至5E16离子/cm²)及后续热退火阶段(500至1100°C)的光学动力学、速率方程动力学和色度演化进行了系统研究。光致发光(PL)光谱分析表明,剂量≤5E14离子/cm²会引起光学响应的改变,且该改变在高剂量注入下不再进一步变化。我们拟合了一个双通道耦合速率方程模型,并通过差分进化优化,从而提取跃迁速率常数。这证明在1000°C下进行热处理可抑制载流子向深层态俘获的速率,同时降低其辐射复合速率。这一动力学瓶颈使通道特异性辐射寿命延长了一个数量级。利用微分复合动力学对激发功率密度的依赖性(其中深层缺陷饱和而MQW发射近似线性标度),我们实现了从暖黄到冷白蓝发射的普适且功率密度可调的色度轨迹。这些发现将微观缺陷物理与观察到的宏观颜色定制联系起来。

英文摘要

Post-growth defect engineering via ion implantation provides a powerful pathway for spatial optical profiling and colour patterning in III-V alloying photonic integration. However, the comprehensive recombination kinetics governing deep-level defect saturation and excitonic recovery under high-temperature annealing remain insufficiently understood. Here, we present a systematic study on the optical dynamics, rate-equation kinetics, and chromaticity evolution of indium-implanted InGaN/GaN multiple quantum wells (MQWs) across implantation doses (5E14 to 5E16 ions cm^-2) and subsequent thermal annealing stages (500 to 1100 deg C). Photoluminescence (PL) spectrum analysis reveals that a dose of <= 5E14 ions cm^-2 induces a modification of the optical response that does not further change upon high-dose implantation. A two-channel coupled rate-equation model is fitted to the data, optimised via differential evolution, allowing the extraction of transition rate constants. This demonstrates that thermal processing at 1000 deg C suppresses the carrier capture rate into deep-level states and also reduces its radiative recombination rate. This kinetic bottleneck drives an order-of-magnitude extension in the channel-specific radiative lifetime. Leveraging the excitation power density dependence of the differential recombination kinetics, where deep defects saturate whilst MQW emission scales near-linearly, we achieve a universal and power density-tunable chromaticity trajectory from warm yellow to cool white-blue emission. These insights enable microscopic defect physics to be linked to the macro-scale colour tailoring observed.

论文原文

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