发表机构
Center for Integrated Nanotechnologies, Sandia National Laboratories; Sandia National Laboratories; Department of Electrical and Computer Engineering, University of California, Santa Barbara; Institute for Theoretical Physics, University of Bremen（桑迪亚国家实验室集成纳米技术中心; 桑迪亚国家实验室; 加州大学圣塔芭芭拉分校电气与计算机工程系; 不来梅大学理论物理研究所）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
通过腔量子电动力学分析InAs量子点单光子性能，揭示发射速率、纯度与不可区分性间的权衡，并强调量子关联对平均场修正的重要性。
AI 中文摘要
利用腔量子电动力学研究腔增强在不同温度下对InAs量子点单光子性能的影响，包括发射速率、纯度和不可区分性。参数研究表明，单光子产生速率与纯度之间存在权衡，不可区分性与纯度之间也存在权衡。结果表明，量子载流子-光子关联的重要性，这些关联对平均场处理产生显著修正，尤其是在光-物质耦合强度较高、腔增强最有效的区域。
英文摘要
Cavity quantum electrodynamics is used to study the extent cavity enhancement affects single photon performance of an InAs quantum dot, in terms of emission rate, purity and indistinguishability at different temperatures. Parametric studies show a tradeoff between single photon production rate and purity, as well as between indistinguishability and purity. The results indicate the importance of quantum carrier-photon correlations that yield substantial corrections to mean-field treatments, especially at high light-matter coupling strength, where cavity enhancement is most effective.
