发表机构
Fermi National Accelerator Laboratory; Illinois Institute of Technology（费米国家加速器实验室; 伊利诺伊理工学院）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究表征了LiNbO3和AlN在毫开尔文温度和单光子功率下的微波介电特性，发现损耗主要由表面二能级系统引起，为超导腔集成电光晶体实现高效微波-光学转换提供了关键见解。
AI 中文摘要
高效的双向微波-光学光子转换是将超导量子处理器扩展到分布式网络的关键能力。然而，要实现所需的转换效率，需要填补理解电光材料损耗机制的关键知识空白。在此，我们表征了单晶块体 LiNbO3 和 AlN 在从单光子水平到较宽功率范围、以及从毫开尔文温度到 1K 以上的微波特性。我们证明这两种材料均表现出二能级系统（TLS）行为，而压电相关损耗被排除。我们表明 TLS 引起的耗散主要局域在表面，而非固有的体相特性，这一结果进一步得到了室温三维 XPS 和飞行时间 SIMS 分析的证实。这些发现为设计将块体电光晶体集成到超导腔中的混合架构提供了有用的见解，证明与高效微波-光学转换兼容的微波品质因子是可以实现的。
英文摘要
Efficient bidirectional microwave optical photon conversion is a key capability for scaling superconducting quantum processors into distributed networks. However, achieving the necessary conversion efficiency requires filling a critical knowledge gap in understanding the loss mechanisms of electro optic materials. Here, we characterize the microwave properties of single crystal bulk LiNbO3 and AlN over a broad range of powers, down to single photon levels, and spanning from millikelvin temperatures to above 1K. We demonstrate that both materials exhibit two level systems (TLS) behavior, while piezoelectric related losses are excluded. We show that TLS induced dissipation is predominantly localized on the surface rather than being an intrinsic bulk property, a result further corroborated by room temperature 3D XPS and time of flight SIMS analyses. These findings provide useful insights to engineer hybrid architectures that integrate bulk electro optic crystals within superconducting cavities, proving that microwave quality factors compatible with high efficiency microwave optical transduction are within reach.
