发表机构
Helmholtz-Zentrum Dresden-Rossendorf; Technische Universität Dresden; Leibniz Institute for Solid State and Materials Research; National Institute for Materials Science（德累斯顿罗森多夫亥姆霍兹中心; 德累斯顿工业大学; 莱布尼茨固体与材料研究所; 国家物质材料研究所）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究利用转移的六方氮化硼中硼空位自旋缺陷，对坡莫合金微盘进行空间分辨量子磁力测量，定量重建了面外杂散场分布，峰值约11.2 mT，验证了该传感器用于磁性微结构定量成像的可行性。
AI 中文摘要
可转移的六方氮化硼（hBN）中承载带负电的硼空位（VB$^{-}$）自旋缺陷，为集成量子磁力测量提供了一个多功能平台，然而磁性微结构的定量成像仍然具有挑战性。在此，我们将转移的hBN薄片与直径为4 μm的坡莫合金（Py = Ni${81}$Fe${19}$）微盘集成，并在室温下进行空间分辨的光探测磁共振测量。施加的面内磁场使涡旋态磁化发生畸变，在相对的圆盘边缘产生边缘局域的磁表面电荷和显著的杂散场特征。通过将每个像素参照其局部零场分裂并校正残余的面外偏置场，我们定量重建了面外杂散场分布，揭示峰值场约为11.2 mT。边缘电荷模型重现了重建场的空间分布和幅度，将ODMR响应与涡旋态的场驱动演化联系起来。这些结果确立了转移的hBN VB$^{-}$传感器用于磁性微结构定量磁力测量的可行性。
英文摘要
Transferable hexagonal boron nitride (hBN) hosting negatively charged boron-vacancy (VB$^{-}$) spin defects offers a versatile platform for integrated quantum magnetometry, yet quantitative imaging of magnetic microstructures remains challenging. Here, we integrate a transferred hBN flake with a 4 $μ$m-diameter permalloy (Py = Ni${81}$Fe${19}$) microdisk and perform spatially resolved optically detected magnetic resonance measurements at room temperature. An applied in-plane magnetic field distorts the vortex-state magnetization, generating edge-localized magnetic surface charges and pronounced stray-field signatures at opposite disk edges. By referencing each pixel to its local zero-field splitting and correcting for a residual out-of-plane bias field, we quantitatively reconstruct the out-of-plane stray-field distribution, revealing peak fields of approximately 11.2 mT. An edge-charge model reproduces the spatial distribution and amplitude of the reconstructed field, linking the ODMR response to the field-driven evolution of the vortex state. These results establish transferred hBN VB$^{-}$ sensors for quantitative magnetometry of magnetic microstructures.
Comments20 pages, 4 Fgures
