利用单一控制场实现解析漏泄抑制：含可调耦合器的快速两比特门
Analytic leakage suppression with a single control field: fast two-qubit gates with tunable couplers
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中文总结 AI 辅助
本研究提出一种基于Magnus展开的解析脉冲整形方法，仅用单一基带控制场即可抑制可调耦合器快速两比特门中的非绝热漏泄，将iSWAP门漏泄降低三个数量级。
中文摘要 AI 辅助
简单的解析脉冲整形技术在量子控制中具有极大的实际用途，典型例子包括用于抑制超导微波门中漏泄的DRAG方法，以及用于实现捷径绝热过程的过渡无驱动方法。这些方法的标准版本需要两个正交控制通道，其中第二个通道有效地打破了时间反演对称性。这似乎排除了它们在仅具有单一实值控制场环境中的应用，例如在许多超导电路架构中常见的基带磁通控制。我们在此表明，通过Magnus展开推导出的简单解析脉冲整形技术即使在仅有一个基带控制通道的情况下也是有效的。我们通过模拟由可调耦合器和基带磁通脉冲实现的transmon之间的两比特门来证明其有效性。我们的修正显著减少了由耦合器斜升引起的非绝热漏泄：对于实际器件参数，快速iSWAP门中的漏泄被抑制了最多三个数量级。我们的方法具有普适性，不仅限于抑制漏泄跃迁处不需要的谱权重，还可应用于多种平台。
英文摘要
Simple analytic pulse-shaping techniques are of great practical utility in quantum control, with prime examples being the DRAG method for suppressing leakage in superconducting microwave gates and the transitionless-driving approach to shortcuts-to-adiabaticity. Standard versions of these methods require two orthogonal control channels, with the second channel effectively breaking time-reversal symmetry. This appears to rule out their use in settings with only a single real-valued control field, such as the kind of baseband flux control that is common in many superconducting circuit architectures. We show here that a simple analytic pulse-shaping technique derived via a Magnus expansion is effective even with just a single baseband control channel. We demonstrate its efficacy by simulating a two-qubit gate between transmons realized with a tunable coupler and baseband flux pulses. Our corrections dramatically reduce non-adiabatic leakage caused by ramping the coupler: for realistic device parameters, leakage in a fast iSWAP gate is suppressed by up to three orders of magnitude. Our approach is general, goes beyond simply suppressing unwanted spectral weight at leakage transitions, and can be applied to a variety of platforms.
发表机构
- Friedrich-Alexander-Universität Erlangen-Nürnberg（埃尔朗根-纽伦堡弗里德里希·亚历山大大学）
- The University of Chicago（芝加哥大学）
- Quint Computing GmbH（Quint计算有限公司）
机构由 AI 辅助整理，请以论文原文为准。
