发表机构
University of Iowa; Eindhoven University of Technology（爱荷华大学; 埃因霍温理工大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
该研究通过从头算和自旋哈密顿量建模，证明单层和双层Cr2O3保持反铁磁半导体基态，且磁振子-声子强杂化使其成为量子自旋电子学的理想平台。
AI 中文摘要
反铁磁氧化物为磁振子学提供了一个引人注目的范式。结合从头算和自旋哈密顿量建模，我们将Cr2O3从体相映射到单层极限，并通过声子谱验证其稳定性。与先前预测的半金属铁磁单层相相反，我们确凿地证明，尽管带隙系统性变窄，单层和双层构型仍保持反铁磁半导体基态。磁振子与声子支的交叉驱动强杂化，确立了低维Cr2O3作为量子自旋电子学的理想平台。
英文摘要
Antiferromagnetic oxides offer a compelling paradigm for magnonics. Combining ab initio and spin Hamiltonian modeling, we map Cr2O3 from bulk to monolayer limits, verifying stability via phonon spectra. Contrary to previously predicted half-metallic ferromagnetic monolayer phases, we conclusively demonstrate that monolayer and bilayer configurations preserve an antiferromagnetic semiconductor ground state despite systematic gap narrowing. Intersecting magnon and phonon branches drive strong hybridization, establishing low-dimensional Cr2O3 as an ideal platform for quantum spintronics.
Comments7 pages, 4 figures
