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arXiv 2609.20486cond-mat.mtrl-sci

应变诱导的反铁磁性 SrCrO$_3$ 薄膜中的金属-绝缘体转变

Strain-Induced Metal-to-Insulator Transition in Antiferromagnetic SrCrO$_3$ Thin Films

S. Jöhr, A. Carta, J. Moreno, A. Suter, Z. Salman, A. Panda, J. Spring, G. De Luca, J. Herrero-Martin, B. Mundet, C. Piamonteze, M. Gabay, C. Ederer, M. Gibert

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中文总结 AI 辅助

本研究通过磁控溅射生长高质量 SrCrO$_3$ 薄膜,发现应变可诱导其从金属态转变为绝缘态,同时保持反铁磁转变温度不变,揭示了应变依赖的能带结构及 Jahn-Teller 畸变机制。

中文摘要 AI 辅助

反铁磁性(AF)金属十分罕见,然而它们兼具对杂散场的鲁棒性和电学读出等对自旋电子器件具有吸引力的特性。在反铁磁性金属氧化物候选材料中,SrCrO$_3$ 因其众所周知的难以合成而 largely 未被探索。在本文中,我们展示了通过磁控溅射在施加宽范围张应变和压应变的衬底上生长高质量 SrCrO$_3$ 薄膜。μ子自旋弛豫实验,辅以 X 射线磁二色性,揭示了在低温下具有稀释磁无序的反铁磁相的出现,而电阻率测量证实了在低应变下 SrCrO$_3$ 同时具有金属基态。随着压应变和张应变均增加,薄膜中诱导出金属-绝缘体转变,而磁转变温度的起始保持不变。此外,一个有趣的电阻率上升,伴随着主要载流子类型的改变,发生在与应变相关的温度下。这些观察表明存在复杂的应变依赖的能带结构,应变诱导的 Jahn-Teller 畸变或 CrO$_6$ 八面体的倾斜根据应变的符号而出现,正如密度泛函理论计算所推断的那样。

英文摘要

Antiferromagnetic (AF) metals are rare, yet they combine properties attractive for spintronic devices like robustness against stray fields and electrical readout. Among AF metal oxide candidates, SrCrO$_3$ remains largely unexplored due to its notoriously difficult synthesis. In this paper, we demonstrate the growth of high-quality SrCrO$_3$ thin films by magnetron sputtering on substrates that impose a wide range of tensile and compressive strains. Muon spin relaxation experiments, supported by x-ray magnetic dichroism, unveil the emergence of an AF phase with dilute magnetic disorder at low temperatures, while resistivity measurements confirm the simultaneous metallic ground state of SrCrO$_3$ under low strain. As both compressive and tensile strain increase, a metal-to-insulator transition is induced in the films, while the onset of the magnetic transition temperature remains unchanged. Moreover, an intriguing resistivity upturn, accompanied by a change in the dominant charge-carrier type, occurs at a temperature that correlates with strain. These observations suggest a complex strain-dependent band structure, with strain-induced Jahn-Teller distortions or tilting of the CrO$_6$ octahedra that emerge depending on the sign of the strain, as inferred from density functional theory calculations.

发表机构

  • University of Zurich(苏黎世大学)
  • ETH Zurich(苏黎世联邦理工学院)
  • Paul Scherrer Institut(保罗谢尔研究所)
  • Technical University of Vienna(维也纳工业大学)
  • PSI Center for Neutron and Muon Sciences(PSI中子与μ子科学中心)
  • Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)(巴塞罗那材料科学研究所(ICMAB-CSIC))
  • ALBA Synchrotron Light Source(阿尔巴同步辐射光源)
  • Institut de Nanosciència i Nanotecnologia (ICN2)(纳米科学与纳米技术研究所(ICN2))
  • PSI Center for Photon Science(PSI光子科学中心)
  • University Paris Saclay(巴黎萨克雷大学)

机构由 AI 辅助整理,请以论文原文为准。

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