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arXiv 2609.20387cond-mat.mtrl-scicond-mat.mes-hall

超低拉伸应变实现激子漏斗与能量转移以提升MoSe2光致发光量子产率

Ultralow-Tensile Strain Enables Exciton Funneling and Energy Transfer to Boost MoSe2 Photoluminescence Quantum Yield

  • Faculty of Physics, University of Warsaw(华沙大学物理学院)
  • SPEC, CEA, CNRS, Université Paris-Saclay(法国原子能和替代能源委员会、国家科学研究中心、巴黎萨克雷大学SPEC实验室)
  • Université Paris-Saclay, ONERA, CNRS, Laboratoire d’étude des microstructures (LEM)(巴黎萨克雷大学、ONERA、国家科学研究中心微结构研究实验室)
  • School of Basic Sciences, Indian Institute of Technology Bhubaneswar(布巴内斯瓦尔印度理工学院基础科学学院)
  • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science(物质材料研究机构材料纳米架构研究中心)
  • Research Center for Electronic and Optical Materials, National Institute for Materials Science(物质材料研究机构电子与光学材料研究中心)

机构由 AI 辅助整理,请以论文原文为准。

Gayatri, Mehdi Arfaoui, Debashish Das, Mateusz Raczyński, Marta Bilska, Piotr Tatarczak, Aleksandra Krystyna Dąbrowska, Tomasz Kazimierczuk, Takashi Taniguchi, … 展开作者

Gayatri, Mehdi Arfaoui, Debashish Das, Mateusz Raczyński, Marta Bilska, Piotr Tatarczak, Aleksandra Krystyna Dąbrowska, Tomasz Kazimierczuk, Takashi Taniguchi, Kenji Watanabe, Piotr Kossacki, Andrzej Wysmołek, Saroj Kumar Nayak, Adam Babiński, Johannes Binder, Maciej R. Molas, Arka Karmakar

AI总结:

通过仅施加0.1%双轴拉伸应变,结合层间能量转移,在ReS2/MoSe2异质结构中实现激子漏斗效应,使光致发光量子产率提升8倍,为增强vdW材料发光效率提供新途径。

AI中文摘要:

应变工程是控制范德华(vdW)异质结构(HSs)中激子动力学的有力途径。层间能量转移(ET)过程是控制vdW HSs中光载流子弛豫路径的另一个关键因素。在本工作中,我们将这两个过程相结合,在由ReS2和MoSe2单层构成的异质结构中,通过薄hBN中间层隔开并置于hBN气泡上,实现了相对光致发光(PL)量子产率(QY)的8倍增强。我们仅通过施加0.1%的双轴拉伸应变即实现了这一增强,该应变导致了高效的激子漏斗效应和增大的跃迁偶极矩。我们的实验数据得到了第一性原理密度泛函理论和相干转移矩阵方法计算的支持,排除了光学干涉作为增强主要来源的可能性。这项工作通过拉伸应变与ET过程之间的相互作用,为增强vdW材料的光致发光量子产率提供了一条创新途径。

英文摘要:

Strain engineering is a powerful route for controlling the exciton dynamics in van der Waals (vdW) heterostructures (HSs). The interlayer energy transfer (ET) process is another key factor in controlling the photocarrier relaxation pathways in vdW HSs. In this work, we combine these two processes to achieve an 8-fold enhancement to the relative photoluminescence (PL) quantum yield (QY) in a HS formed from monolayers of ReS2 and MoSe2, separated by a thin hBN interlayer, placed onto an hBN bubble. We achieve this enhancement by applying only 0.1% biaxial tensile strain, which results in efficient exciton funneling and an increased transition dipole moment. Our experimental data are supported by first-principles density-functional theory and coherent transfer-matrix method calculations, ruling out optical interference as the dominant origin of the enhancement. This work provides an innovative route for enhancing the PL QY of vdW materials via interplay between the tensile strain and the ET process.

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