AI 中文总结
本文提出通过TiO2介电界面工程稳定近表面NV中心电荷态，在超高真空下使NV-布居数增加79%、自旋共振对比度增强45%，为极端条件下纳米级量子传感提供可重复策略。
AI 中文摘要
近表面量子缺陷的电荷态稳定性控制对于纳米级传感至关重要，但在超高真空（UHV）条件下尤为挑战，因为表面诱导的能带弯曲会破坏计量相关电荷态的稳定性。在此，我们提出一种基于介电界面工程的稳健且可重复的方法，用于在近超高真空条件（P = $3 \ imes 10^{-9}$ mbar）下稳定浅注入（< 10 nm深）的氮-空位（NV）中心。通过对可单独寻址的NV中心进行测量，我们证明在金刚石上涂覆TiO2涂层可抑制表面诱导的静电场，在室温下使NV-布居数增加79%，并使NV自旋共振对比度增强45%。相干控制测量进一步揭示了电荷态转换动力学的抑制。这些结果确立了介电屏蔽作为一种强大且可重复的策略，用于在极端条件下、扫描探针兼容的几何结构中调控NV中心的电荷跃迁能量学。
英文摘要
Control of charge-state stability in near-surface quantum defects is critical for nanoscale sensing, yet remains particularly challenging under ultra-high vacuum (UHV), where surface-induced band bending destabilizes the metrologically relevant charge-state. Here, we present a robust and reproducible approach for stabilizing shallowly implanted (< 10 nm deep) nitrogen-vacancy (NV) centers in near-UHV conditions (P = $3 \times 10^{-9}$ mbar) based on dielectric interface engineering. Through measurements on individually addressable NV centers, we demonstrate that a TiO2 coating on the diamond suppresses surface-induced electrostatic fields, yielding a 79% increase n NV- population and a 45% enhancement in NV-spin resonance contrast at room temperature. Coherent control measurements further reveal suppressed charge-state conversion dynamics. These results establish dielectric screening as a powerful and reproducible strategy to engineer charge transition energetics of NV centers in scanning-probe-compatible geometries under extreme conditions.
Comments24 pages, 5 figures
