基于高熵拓扑绝缘体(Bi3/4Sb1/4)2(Te2/5Se2/5S1/5)3的单晶厚膜的光响应特性
Photoresponse properties of single-crystalline thick film based on high-entropy topological insulator (Bi3/4Sb1/4)2(Te2/5Se2/5S1/5)3
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中文总结 AI 辅助
该研究首次制备高熵拓扑绝缘体(Bi3/4Sb1/4)2(Te2/5Se2/5S1/5)3单晶厚膜，并展示其光电探测器在可见光下具有强光伏响应，响应度和探测率分别达8.7 mA/W和109 Jones。
中文摘要 AI 辅助
高熵拓扑绝缘体(Bi3/4Sb1/4)2(Te2/5Se2/5S1/5)3首次通过自蔓延高温合成和熔融方法制备。采用厚度约为0.1 mm的单晶厚膜样品，利用室温斩波光技术考察其光响应特性。基于(Bi3/4Sb1/4)2(Te2/5Se2/5S1/5)3的光电探测器在白光LED照射下表现出强烈的光伏响应，覆盖420-730 nm范围。当光强从100 W/m2增加到600 W/m2时，光电流从约20 mkA增加到约55 mkA，这源于光生非平衡载流子数量的增加。该光电探测器的室温响应度和探测率分别约为8.7 mA/W和109 Jones。
英文摘要
High-entropy topological insulator (Bi3/4Sb1/4)2(Te2/5Se2/5S1/5)3 has been for the first time prepared by self-propagating high-temperature synthesis and melting methods. Single-crystalline thick-filmed sample with thickness of ~0.1 mm was applied to examine the photoresponse properties by using room-temperature chopped-light technique. Photodetector based on (Bi3/4Sb1/4)2(Te2/5Se2/5S1/5)3 demonstrated strong photovoltaic response under irradiation of a white LED light, covering 420-730 nm range. The photocurrent increases from ~20 to ~55 mkA with the increase in intensity from 100 to 600 W/m2 that is originated from the increase in the number of non-equilibrium carriers generated by light. Room-temperature responsivity and detectivity of the photodetector are ~8.7 mA/W and ~109 Jones, respectively.
发表机构
- A.B. Nalbandyan Institute of Chemical Physics NAS RA（亚美尼亚国家科学院纳尔班扬化学物理研究所）
- Belgorod State University（别尔哥罗德国立大学）
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