发表机构
Kyma Technologies Inc; National Laboratory of the Rockies（Kyma科技公司; 落基山国家实验室）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究提出在石英反应室中直接注入HCl气体抑制反向极性晶粒，实现1000°C低温HVPE生长高质量单晶AlN薄膜，厚度5微米，生长速率20微米/小时。
AI 中文摘要
通过卤化物气相外延（HVPE）方法生长的低缺陷、单一极性氮化铝（AlN）层，传统上需要远高于1100°C的生长温度，其中许多最佳结果是在1400°C范围内生长的。这些高温通常是为了获得具有光滑形貌和高晶体质量的Al极性AlN薄膜所必需的。然而，这些高温使得石英反应室的使用变得困难，因为石英在1200°C时开始软化，并且需要专门设计的反应器。本研究考察了将无水氯化氢（HCl）气体直接注入生长表面，以抑制在低温生长时形成的反向极性晶粒。该方法允许在石英反应室中仅以1000°C的生长温度生长高质量的单晶AlN层。使用该方法，在c面（0 0 0 1）蓝宝石上生长了厚度为5微米的AlN层，生长速率为20微米/小时，对称（0 0 0 2）摇摆曲线反射的半高宽（FWHM）低于400角秒，非对称（1 0 -1 2）反射的半高宽低于1000角秒。电子背散射衍射测量表明，随着游离HCl的增加，反转畴受到抑制，从而获得更光滑、更高质量的薄膜。
英文摘要
Low defect, single polarity aluminum nitride layers grown by halide vapor phase epitaxy (HVPE) methods have classically needed growth temperatures well exceeding 1100°C with many of the best results being grown in the range of 1400°C. These high temperatures have typically been required to obtain Al-polar AlN films with smooth morphologies and high crystalline quality. However, these elevated temperatures make the use of quartz reactor chambers difficult, as quartz begins to soften at 1200°C, and requires specially designed reactors. This study examines the use of anhydrous hydrogen chloride (HCl) gas, injected directly to the growth surface, to suppress inverted polarity grains that form at low growth temperatures. This method allows for high quality, single crystal AlN layers with a growth temperature of just 1000°C in a quartz reactor chamber. With this method, AlN layers of 5 um thickness were grown on c-plane (0 0 0 1) sapphire, with a growth rate of 20 um/hour, and a resulting full-width at half-maximum (FWHM) of symmetric (0 0 0 2) rocking curve reflection under 400 arcsec and asymmetric (1 0 -1 2) reflection under 1000 arcsec. Electron backscatter diffraction measurements showed the suppression of inversion domains with increasing free HCl, resulting in smoother and higher quality films.
Comments7 pages, 6 figures, to be submitted to Journal of Crystal Growth
