发表机构
National Laboratory of the Rockies; Advanced Photon Source, Argonne National Laboratory; Materials Science Division, Argonne National Laboratory（落基山国家实验室; 阿贡国家实验室先进光子源; 阿贡国家实验室材料科学部）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文提出利用InN牺牲覆盖层保护III族氮化物薄膜，通过热脱附原位去除覆盖层，恢复表面质量，便于后续表面敏感表征。
AI 中文摘要
III族氮化物薄膜对于光电子和功率器件至关重要，其表面和界面质量对性能有决定性影响。这些薄膜在加工或表征步骤中通常需要在大气环境中转移，这可能引入显著的表面污染。在此，我们展示了一种通过在III-N薄膜表面覆盖牺牲性InN层来保护其在大气暴露期间免受污染的技术。以分子束外延生长的AlGaN薄膜作为代表性受保护材料，我们利用InN和金属In较低的分解和脱附温度，通过热脱附原位去除保护覆盖层，而不损伤下方的AlGaN薄膜。对Al0.4Ga0.6N价带色散的角分辨光电子能谱（ARPES）测量表明，在InN脱附后薄膜表面得以恢复，这凸显了该工艺在允许对暴露于空气的薄膜进行进一步表面敏感表征方面的多功能性。
英文摘要
Group III-nitride thin films are essential for optoelectronic and power devices, where surface and interface quality critically influence performance. It is often necessary to transfer these films through atmosphere for processing or characterization steps, which can introduce significant surface contamination. Here we demonstrate a technique to protect the surface of III-N films during atmospheric exposure by capping with sacrificial InN layers. Using molecular beam epitaxy grown AlGaN films as our representative protected material, we take advantage of the lower decomposition and desorption temperatures of InN and metallic In to remove the protective cap layer in situ via thermal desorption without damaging the AlGaN film beneath. Angle-resolved photoemission spectroscopy (ARPES) measurements of the valence band dispersion in Al0.4Ga0.6N demonstrate that the film surface is recovered after InN decapping, highlighting the versatility of this process in allowing further surface-sensitive characterization of films that had been exposed to air.
