高性能轨道力矩磁性存储器在300毫米平台上的实现
High-performance orbital-torque magnetic memory on the 300-mm platform
- Zhejiang Hikstor Technology Co. LTD.（浙江海克存储科技有限公司）
- Institute of Quantum Materials and Devices（天津工业大学电子与信息工程学院量子材料与器件研究所）
- School of Electronic and Information Engineering, Tiangong University（清华大学物理系低维量子物理国家重点实验室）
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University（浙江大学物理学院量子物质中心）
- Center for Quantum Matter, School of Physics, Zhejiang University
机构由 AI 辅助整理，请以论文原文为准。
AI总结：
本研究在300毫米平台上利用Ti/W双层结构的轨道力矩，实现了具有182%巨隧穿磁阻、纳秒响应和超低写入能耗的高性能磁性存储器，为高能效MRAM提供了新路径。
AI中文摘要：
当代存储器技术日益受到存储容量、访问延迟和功耗这一基本三难困境的制约。在新兴技术中，自旋轨道力矩磁随机存取存储器（SOT-MRAM）因其快速开关动力学和高耐久性而有望规避这些挑战。然而，SOT-MRAM的应用受到相对较低的写入和读取效率的阻碍，导致位单元面积较大且传感裕量不足。同时，超薄自旋源通道（通常仅几纳米厚）的引入给大规模生产带来了技术挑战。在此，我们通过在300毫米晶圆平台上利用新兴的轨道自由度以及相对较厚的Ti/W双层结构所产生的轨道力矩（OT）来解决这些问题。具体而言，OT存储器纳米器件展现出182%的巨隧穿磁阻（TMR）、纳秒级响应、10^12次耐久性，以及增强的开关效率（E_b/I_c），从而实现了低于0.1 pJ/bit的超低写入能量。我们的研究结果表明，轨道角动量可用于构建高能效的MRAM器件，为高性能计算和人工智能应用所需低延迟存储器提供了一条实用路径。
英文摘要：
Contemporary memory technologies are increasingly constrained by the fundamental trilemma of storage capacity, access latency, and power consumption. Among the emerging technologies, spin-orbit torque magnetic random-access memory (SOT-MRAM) shows promise to circumvent these challenges, owing to its fast switching dynamics and high endurance. However, the application of SOT-MRAM is hindered by the relatively low write and read efficiencies, resulting in a large bitcell area and an insufficient sensing margin. Meanwhile, the involvement of an ultrathin spin-source channel, typically within a few nanometers, imposes technological challenges for mass production. Here, we resolve these issues on a 300-mm wafer platform by exploiting the emerging orbital degree of freedom and the resultant orbital torque (OT) from the relatively thick Ti/W bilayer. In particular, OT memory nanodevices exhibit a giant tunnel magnetoresistance (TMR) of 182%, nanosecond-scale response, 1012 endurance, together with an enhanced switching efficiency (E_b/I_c), which consequently enables an ultra-low write energy of less than 0.1 pJ/bit. Our findings demonstrate that orbital angular momentum can be implemented for building energy-efficient MRAM devices, offering a practical pathway towards low-latency memory that is demanded for high-performance computing and AI applications.
