硅雪崩跃迁边缘测辐射热计:逼近非制冷长波红外探测的热力学极限
Silicon avalanche transition edge bolometer: approaching the thermodynamic limit for uncooled long-wave infrared detection
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中文总结 AI 辅助
本文提出硅雪崩跃迁边缘(SATE)测辐射热计,利用超高正电阻温度系数(330%/K)抑制噪声,实现非制冷长波红外探测的高响应度、低噪声等效功率和宽带宽,逼近热力学极限。
中文摘要 AI 辅助
测辐射热计通过热阻材料中的辐射诱导加热,将入射电磁辐射转换为可测量的电信号。它们具有无需低温冷却即可探测低能光子的独特能力,被广泛用于非制冷长波红外(LWIR)辐射探测和热成像。尽管其基本探测极限由热力学涨落决定,但最先进的非制冷测辐射热计由于约翰逊噪声、1/f噪声以及读出电路噪声的存在,其工作性能仍远高于该极限。在此,我们通过引入一种新的非制冷长波红外测辐射热计概念——硅雪崩跃迁边缘(SATE)测辐射热计来应对这一挑战。该器件在雪崩击穿相关的陡峭电流跃迁边缘附近工作,展现出高达330%/K的超高正电阻温度系数(TCR),极大地抑制了其他噪声源的影响。即使没有任何热绝缘结构,SATE测辐射热计在9.5微米辐射下仍能提供高达160 mA/W的室温响应度、370 pW/√Hz的噪声等效功率,以及由强电热反馈增强的77 kHz带宽——这些性能是传统TCR为-1~-3%/K的测辐射热计材料无法达到的。我们的工作建立了一种有前景的热电转换机制,利用CMOS技术实现高灵敏度、高速室温热成像和红外光谱分析。
英文摘要
Bolometers transduce incident electromagnetic radiation into measurable electrical signals via radiation-induced heating in thermo-resistive materials. They are uniquely capable of detecting low-energy photons without cryogenic cooling, and are widely deployed for uncooled long-wave infrared (LWIR) radiation detection and thermal imaging. Although their fundamental detection limit is set by the thermodynamic fluctuations, state-of-the-art uncooled bolometers still operate well above this limit due to the presence of Johnson noise, 1/f noise and noises from the readout circuits. Here, we address this challenge by introducing a new uncooled LWIR bolometer concept---the silicon avalanche transition edge (SATE) bolometer. Operating near the steep current transition edge associated with avalanche breakdown, the device exhibits an ultra-high, positive temperature coefficient of resistance (TCR) of 330 %/K, greatly suppressing the impacts of other noise sources. Even without any thermal insulation structures, the SATE bolometer delivers a high room-temperature responsivity up to 160 mA/W for 9.5 $μ$m radiation, a noise equivalent power of 370 pW/$\sqrt{\mathrm{Hz}}$, and a strong electro-thermal feedback enlarged bandwidth of 77 kHz---performance unattainable with conventional bolometer materials with a TCR of $-1\sim-3\%$/K. Our work establishes a promising thermo-electric transduction mechanism toward high-sensitivity, high-speed room-temperature thermal imaging and infrared spectroscopy using CMOS technology.
发表机构
- City University of New York(纽约市立大学)
- Graduate Center, City University of New York(纽约市立大学研究生院)
- Stanford University(斯坦福大学)
- CNRS, Ecole Centrale Lyon, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, INL(法国国家科学研究中心、里昂中央理工学院、里昂国立应用科学学院、里昂第一大学、里昂高等化学物理学院、里昂国家科学研究所)
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