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利用模态相位匹配桥接高Q值与Kerr非线性光子学

Bridging high-Q and Kerr-nonlinear photonics using modal phase matching

Jordan R. Stone, Saleha Fatema, Christopher V. Poulton, Michael G. Wood, Gordon A. Keeler, Kartik Srinivasan

arXiv 2609.17444首次发表:更新:

发表机构

National Institute for Standards and Technology; Whiting School of Engineering, Johns Hopkins University; Beacon Photonics; Joint Quantum Institute, NIST/University of Maryland(国家标准与技术研究院; 约翰斯·霍普金斯大学惠廷工程学院; 灯塔光子学; NIST/马里兰大学联合量子研究所)

机构由 AI 辅助整理,请以论文原文为准。

AI 中文总结

本文提出模态相位匹配方法,在氮化硅平台上实现高Q值Kerr微谐振器,解耦Q值与色散,实现高效参量振荡及宽波段波长产生。

AI 中文摘要

集成Kerr微谐振器为波长转换、光学频率梳和量子光源提供片上光学非线性。传统上,其色散工程将非线性功能与谐振器几何结构紧密关联,迫使与其他器件目标进行权衡。特别是,Kerr微谐振器通常具有窄的谐振器波导,但宽波导通过减少侧壁散射支持更高的Q值。我们提出模态相位匹配——利用多个空间模式族来满足色散要求——可促进超越传统几何结构的Kerr非线性光学。我们与商业代工厂合作,在160纳米厚的氮化硅平台上设计并制造了高Q值(>10^7)微谐振器,并演示了Kerr光学参量振荡。我们实现了20%的转换效率,并在铯D1跃迁处实现了超过1纳米的参量振荡无间隙波长调谐。模态相位匹配还支持在1060纳米和795纳米波段泵浦,无需定制器件层,即可产生600纳米至1400纳米波长的光。我们的工作扩展了Kerr设计空间,有效解耦Q值与色散,为高Q值非线性器件创造新机遇。

英文摘要

Integrated Kerr microresonators provide on-chip optical nonlinearity for wavelength conversion, optical frequency combs, and quantum light sources. Traditionally, their dispersion engineering has tied nonlinear functionality to resonator geometry, forcing trade-offs with other device objectives. In particular, Kerr microresonators usually feature narrow resonator waveguides, but wide waveguides support higher Q through reduced sidewall scattering. We propose that modal phase matching - invoking multiple spatial mode families to satisfy dispersion requirements - facilitates Kerr nonlinear optics beyond traditional geometries. Working with a commercial foundry, we design and fabricate high-$ (>10^7) microresonators on a 160-nm-thick silicon nitride platform and demonstrate Kerr optical parametric oscillation. We achieve 20% conversion efficiency and gap-free wavelength tuning over >1 nm for parametric oscillation at the cesium D1 transition. Modal phase matching further supports pumping in both 1060-nm and 795-nm bands, without custom device layers, for wavelength generation between 600 nm to 1400 nm. Our work expands the Kerr design space, effectively decoupling Q and dispersion to create new opportunities with high-Q nonlinear devices.

论文原文

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